Surface Treatment And Modification Of Graphene Using Organosilane And Its Thermal Stability

• Autorzy: Kim D.-S. , Dhand V. , Rhee K.-Y. , Park S.-J.

Identyfikatory

DOI

10.1515/amm-2015-0137

Warianty tytułu

PL

Obróbka powierzchniowa i modyfikacja grafenu przy użyciu organosilanu i jego stabilność termiczna

• Języki publikacji: EN

Abstrakty

EN

In this study, graphene was functionalized via acid oxidation in the presence of a mixture of concentrated sulfuric acid and nitric acid. The oxidized graphene was silanized using the coupling agent, 3-aminopropyltriethoxsilane, resulting in functionalized graphene. The oxidized graphene and functionalized graphene were characterized by X-Ray diffraction, Fourier transform infrared spectroscopy, High-resolution micro Raman spectroscopy, thermogravimetric analysis, and atomic force microscopy to confirm the presence of functional moieties on the graphene surface. Thermal studies also demonstrate that the functionalized material is thermally stable up to higher temperatures.

Słowa kluczowe

EN

graphite; thermal properties; Raman spectroscopy; surface treatment; 3-APTES

PL

grafit; właściwości termiczne; spektroskopia Ramana; obróbka powierzchniowa; 3-APTES

• Wydawca: Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences
• Czasopismo: Archives of Metallurgy and Materials
• Rocznik: 2015
• Tom: Vol. 60, iss. 2B
• Strony: 1387--1391
• Opis fizyczny: Bibliogr. 30 poz., rys.

Twórcy

autor

Kim D.-S.

• Department of Mechanical Engineering, Kyung Hee University, 1732 Deongyeong-Daero, Yongin-Si, Gyeonggi 446-701, Korea

autor

Dhand V.

• Department of Mechanical Engineering, Kyung Hee University, 1732 Deongyeong-Daero, Yongin-Si, Gyeonggi 446-701, Korea

autor

Rhee K.-Y.

• Department of Mechanical Engineering, Kyung Hee University, 1732 Deongyeong-Daero, Yongin-Si, Gyeonggi 446-701, Korea

autor

Park S.-J.

• Department of Chemistry, Inha University, 253 Nam-Gu, Incheon, 402-751, Korea

Bibliografia

• [1] A. K. Geim, K. S. Novoselov, Nat. Mater. 6, 183 (2007).
• [2] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov, Science. 306, 666 (2004).
• [3] Y. B. Zhang, Y. W. Tan, H. L. Stormer, P. Kim, Nature. 438, 201 (2005).
• [4] A. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, C.N. Lau, Nano. Lett. 8, 902 (2008).
• [5] J. Moser, A. Barrieiro, A. Bachtold, Current-induced cleaning of graphene, Appl. Phys. Lett. 91, 163513 (2007).
• [6] J. R. Potts, D. R. Dreyer, C. W. Bielawski, R. S. Ruoff, Polymer. 52, 5 (2011).
• [7] G. Eda, M. Chhowalla, Nano. Lett. 9, 814 (2009).
• [8] B. Das, K. E. Prasad, U. Ramamurty, C. Rao, Nanotechnology. 20, 125705 (2009).
• [9] K. E. Prasad, B. Das, U. Maitra, U. Ramamurty, C. Rao, PNAS. 106, 13186 (2009).
• [10] J. Guo, L. Ren, R. Wang, C. Zhang, Y. Yang, T. Liu, Compos. Part B-Eng. 42, 2130 (2011).
• [11] G. W. Jeon, J. E. An, Y. G. Jeong, Compos. Part B-Eng. 43, 3412 (2012).
• [12] M. A. Rafiee, J. Rafiee, Z. Wang, H. Song, Z. Z. Yu, N. Koratkar, ACS Nano 3, 3884 (2009).
• [13] H. Chen, M. B. Müller, K. J. Gilmore, G. G. Wallace, D. Li, Adv. Mater. 20, 3557 (2008).
• [14] J. Kathi, K. Y. Rhee, J. Mater. Sci. 43, 33 (2008).
• [15] P. C. Ma, J. K. Kim, B. Z. Tang, Carbon. 44, 3232 (2006).
• [16] P. Mahanandia, P. Vishwakarma, K. Nanda, V. Prasad, S. Subramanyam, S. Dev, P. V. Satyam, Mater. Res. Bull. 41, 2311 (2006).
• [17] V. Labunov, B. Shulitski, A. Prudnikava, K. Yanushkevich, J. Phys. Conf. Ser. 100, 052095 (2008).
• [18] W. Li, C. Liang, W. Zhou, J. Qiu, Z. Zhou, G. Sun, Q. Xin, J. Phys. Chem. B. 107, 6292 (2003).
• [19] J. N. Ding, Y. B. Liu, N. Y. Yuan, G. Q. Ding, Y. Fan, C. T. Yu, Diamond Relat. Mater. 21, 11 (2012).
• [20] S. Gurunathan, J. W. Han, A. A. Dayem, V. Eppakayala, M. R. Park, D. N. Kwon, J. H. Kim, J. Ind. Eng. Chem. 19, 1280 (2013).
• [21] S. H. Song, H. K. Jeong, Y. G. Kang, J. Ind. Eng. Chem. 16, 1059 (2010).
• [22] X. Li, Y. Zhao, W. Wu, J. Chen, G. Chu, H. Zou, J. Ind. Eng. Chem. (2013), DOI: 10.1016/j.jiec.2013.09.029 (in press).
• [23] S. Bittolo Bon, M. Piccinini, A. Mariani, J. M. Kenny, L. Valentini, Diamond Relat. Mater. 20, 871 (2011).
• [24] S. Hou, S. Su, M. L. Kasner, P. Shah, K. Patel, C. J. Madarang, Chem. Phys. Lett. 501, 68 (2010).
• [25] M. Castriota, E. Cazzanelli, D. Pacilè, L. Papagno, Ç. O. Girit, J. C. Meyer, A. Zettl, M. Giarola, G. Mariotto, Diamond Relat. Mater. 19, 608 (2010).
• [26] S. Takabayashi, S. Ogawa, Y. Takakuwa, H. C. Kang, R. Takahashi, H. Fukidome, M. Suemitsu, T. Suemitsu, T. Otsuji, Diamond Relat. Mater. 22, 118 (2012).
• [27] Y. Min, K. Zhang, L. Chen, Y. Chen, Y. Zhang, Diamond Relat. Mater. 26, 32 (2012).
• [28] Y. Hsieh, M. Hofmann, J. Kong, Carbon. 67, 417 (2014).
• [29] J. Shen, Y. Hu, C. Li, C. Qin, M. Shi, M. Ye, Langmuir. 25, 6122 (2009).
• [30] G. Wang, J. Yang, J. park, X. Gou, B. Wang, H. Liu, J. Yao, J. Phys. Chem. B. 112, 8192 (2008).

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.