Pressure dependence of the band gap energy for the dilute nitride GaNxAs1−x

• Autorzy: Zhao C.-Z. , Wei T. , Sun X.-D. , Wang S.-S. , Lu K.-Q.

Identyfikatory

DOI

10.1515/msp-2016-0110

• Języki publikacji: EN

Abstrakty

EN

A model is developed to describe the pressure dependence of the band gap energy for the dilute nitride GaN_xAs_1-x. It is found that the sublinear pressure dependence of E_- is due to the coupling interaction between E₊ and E_-. We have also found that GaN_xAs_1-xneeds much larger pressure than GaAs to realize the transition from direct to indirect band gap. It is due to two factors. One is the coupling interaction between the E₊ and E_-. The other is that the energy difference between the X conduction band minimum (CBM) and the G CBM in GaN_xAs_1-x is larger than that in GaAs. In addition, we explain the phenomenon that the energy difference between the X CBM and the G CBM in GaN_xAs_1-xis larger than that in GaAs. It is due to the impurity-host interaction.

Słowa kluczowe

EN

GaNAs; band gap energy; pressure dependence; dilute nitride

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 4
• Strony: 881--885
• Opis fizyczny: Bibliogr. 18 poz., rys.

Twórcy

autor

Zhao C.-Z.

• Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information

autor

Wei T.

• Engineering, Tianjin Polytechnics University, Tianjin, 300387, China

autor

Sun X.-D.

• Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information

autor

Wang S.-S.

• Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information

autor

Lu K.-Q.

• Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information

Bibliografia

• [1] UESUGI K., MAROOKA N., SUEMUNE I., Appl. Phys. Lett., 74 (1999), 1254.
• [2] ZHAO C.Z., LI N.N., WEI T., TANG C.X., Chin. Phys. Lett., 28 (2011), 127801.
• [3] KLAR P.J., GRUNING ¨ H., HEIMBRODT W., KOCH J., HOHNSDORF ¨ F., STOLZ W., VICENTE P.M.A., CAMASSEL J., Appl. Phys. Lett., 76 (2000), 3439.
• [4] UESUGI K., SUEMUNE I., HASEGAWA T., AKUTAGAWA T., NAKAMURA T., Appl. Phys. Lett., 76 (2000), 1285.
• [5] DENG H.X., LI J., LI S.S., PENG H., XIA J.B., WANG L.W., WEI S.H., Phys. Rev. B, 82 (2010), 193204.
• [6] SEONG M.J., MASCARENHAS A., GEISZ J.F., Appl. Phys. Lett., 79 (2001), 1297.
• [7] FRANCOEUR S., SEONG M.J., HANNA M.C., GEISZ J.F., MASCARENHAS A., XIN H.P., TU C.W., Phys. Rev. B, 68 (2003), 075207.
• [8] TIMOSHEVSKII V., COT ˆ E ´ M., GILBERT G., LEONELLI R., TURCOTTE S., BEAUDRY J.N., DESJARDINS P., LAROUCHE S., MARTINU L., MASUT R.A., Phys. Rev. B, 74 (2006), 165120.
• [9] MERRICK M., CRIPPS S.A., MURDIN B.N., HOSEA T.J.C., VEAL T.D., MCCONVILLE C.F., Phys. Rev. B, 76 (2007), 075209.
• [10] WEINSTEIN B.A., STAMBACH S.R., RITTER T.M., MACLEAN J.O., WALLIS D.J., Phys. Rev. B, 68 (2003), 035336.
• [11] SHAN W., WALUKIEWICZ W., AGER III J.W., HALLER E.E., GEISZ J.F., FRIEDMAN D.J., OLSON J.M., KURTZ S.R., J. Appl. Phys., 86 (1999), 2349.
• [12] WOLFORD D.J., BRADLEY J.A., FRY K., THOMPSON J., The Nitrogen Isoelectronic Trap in GaAs, in: CHADI J.D., HARRISON W.A., (Eds.), Physics of Semiconductors, Springer, New York, 1984, p. 627.
• [13] GONI A.R., STROSSNER K., SYASSEN K., CARDONA M., Phys. Rev. B, 36 (1987), 1581.
• [14] WANG W.J., SU F.H., DING K., LI G.H., YOON S.F., FAN W.J., WICAKSONO S., MA B.S., Phys. Rev. B, 74 (2006), 195201.
• [15] TSANG M.S., WANG J.N., GE W.K., LI G.H., FANG Z.L., CHEN Y., HAN H.X., LI L.H., PAN Z., Appl. Phys. Lett., 78 (2001), 3595
• [16] WU J., WALUKIEWICZ W., YU K.M., AGER III J.W., HALLER E.E., HONG Y.G., XIN H.P., TU C.W., Phys. Rev. B, 65 (2002), 241303(R).
• [17] ZHAO C.Z., WEI T., SUN X.D., WANG S.S., LU K.Q., J. Alloy. Compd., 608 (2014), 66.
• [18] ZHAO C.Z., WEI T., LI N.N., WANG S.S., LU K.Q., J. Appl. Phys., 116 (2014), 063512.

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).