Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

• Autorzy: Bogdanov R. V. , Kostiukevych O. M.

Identyfikatory

DOI

10.1515/msp-2015-0001

• Języki publikacji: EN

Abstrakty

EN

A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas) confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

Słowa kluczowe

EN

Monte Carlo computer simulation; magnetron sputtering; flux of particles; carbon; graphite target; energy of particles

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2015
• Tom: Vol. 33, No. 1
• Strony: 82--94
• Opis fizyczny: Bibliogr. 19 poz., rys.

Twórcy

autor

Bogdanov R. V.

• Taras Shevenko National University of Kyiv, Faculty of Radio Physics, Electronics and Computer Systems, 4G, Prospekt Hlushkov, Kyiv, Ukraine

autor

Kostiukevych O. M.

• Taras Shevenko National University of Kyiv, Faculty of Radio Physics, Electronics and Computer Systems, 4G, Prospekt Hlushkov, Kyiv, Ukraine

Bibliografia

• [1] BOGDANOV R.V., KOSTIUKEVICH O.M., Visnik Kiyivskoho nacionalnogo universitetu imeni Tarasa Shevchenka. Seriya: Fizyko-matematichni nauky, 1 (2012), 249 (in Ukrainian).
• [2] BOGDANOV R.V., KOSTIUKEVICH O.M., Problems of Atomic Science and Technology. Series: Plasma Physics (19), 1 (2013), 189.
• [3] BOGDANOV R., KOSTIUKEVICH O., Visnik Kiyivskoho nacionalnogo universitetu imeni Tarasa Shevchenka.: Radiofizyka ta electronika, 20 (2) (2013), 7.
• [4] DANILIN B.S. Primeneniye nizkotemperaturnoy plazmy dlya naneseniya tonkih plenok, M., Energoatomizdat, 1989 (in Russian).
• [5] KUZMICHEV A.I. Magnetronnyie raspilitenye systemy. Kniga 1. Vvedenie v fiziku i tehniku magnetronnogo raspilenija, Avers, Kiev, 2008 (in Russian).
• [6] DEPLA D., MAHIEU S. AND GREENE J.E., Sputter Deposition Processes, Processing in: MARTIN P.M. Handbook of Deposition Technologies for Films and Coatings, Third Edition: Science, Applications and Technology, William Andrew, 2010, p. 253.
• [7] KASHTANOV P.V., SMIRNOV B.M., HIPPLER R., Uspekhi Fizicheskikh Nauk, 177 (5) (2007), 473 (in Russian).
• [8] ANTONENKO S.V., MAL’CEV S.N., Pribory i tekhnika eksperimenta, 3 (2005), 150 (in Russian).
• [9] ANTONENKO S.V., Magnetronnaja tehnologija sozdanija grafitovyh pokrytij, nanotrubok, i nanostruktur na ih osnove, in: Funkcional’nye materialy i vysokochistye veshhestva,http://www.edu-cons. net/atlas_last/doc/444/Antonenko_rus.pdf, 2007, (in Russian).
• [10] SHCHUR D.V., MATYSINA Z.A., ZAGINAYCHENKO S.YU., Uglerodnyye nanomaterialy i fazovyye prevrashcheniya v nikh.: Monografiya, Nauka i obrazovaniye, Dnepropetrovsk, 2007 (in Russian).
• [11] GRAVES D.B., BRAULT P., J. Phys. D Appl. Phys., 42 (2009), 194011.
• [12] BULTINCK E., BOGAERTS A., J. Phys. D Appl. Phys., 41 (2008), 202007.
• [13] MUSSCHOOT J., DEPLA D., HAEMERS J., DE GRYSE R., Plasma Sources Sci. T., 39 (2006), 3989.
• [14] MUSSCHOOT J., DEPLA D., HAEMERS J., DE GRYSE R., Plasma Sources Sci. T., 41 (2008), 1.
• [15] QINGQUAN Q., QINGFU L., JINGJING S., JIAO Y., FINLEY J., Plasma Sci. Technol., 10 (6) (2008), 694.
• [16] KUCHERENKO E.T., Plasmotehnologia-97: Sb. nauch. trudov, RIP Vidavets, Zaporozhye, 1997, p. 121 (in Russian).
• [17] MUSIL J., VLCEK J., BAROCH P., Magnetron Discharges for Thin Films Plasma, Processing in PAULEAU Y. (Ed.), Materials surface processing by directed energy techniques, Elsevier, 1990, p. 100.
• [18] VOL’PYAS V.A., GOL’MAN YE.K., Zhurnal tekhnicheskoy fiziki, 70 (3) (2000), 13 (in Russian).
• [19] Razvitiye product union. Tekhnicheskiy spravochnik. At http://razvitie-pu.ru/?page_id=949, 2013, (in Russian).