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Structural and optical properties of SnO2-Al2O3 nanocomposite synthesized via sol-gel route

Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
A nanocomposite of 0.5SnO2-0.5Al2 O3 has been synthesized using a sol-gel route. Structural and optical properties of the nanocomposite have been discussed in detail. Powder X-ray diffraction and scanning electron microscopy with energy-dispersive X-ray diffraction spectroscopy confirm the phase purity and the particle size of the 0.5SnO2-0.5Al2 O3 nanocomposite (13 to 15 nm). The scanning electron microscopy also confirms the porosity in the sample, useful in sensing applications. The FT-IR analysis confirms the presence of physical interaction between SnO2 and Al2 O3 due to the slight shifting and broadening of characteristic bands. The UV-Vis analysis confirms the semiconducting nature because of direct transition of electrons into the 0.5SnO2-0.5Al2 O3 nanocomposites.
Wydawca
Rocznik
Strony
714--718
Opis fizyczny
Bibliogr. 16 poz., rys.
Twórcy
autor
  • Material/Organometallics Laboratory, Department of Chemistry, Atma Ram Sanatan Dharma College, University of Delhi, New Delhi-110 021, India
autor
  • Material/Organometallics Laboratory, Department of Chemistry, Atma Ram Sanatan Dharma College, University of Delhi, New Delhi-110 021, India
autor
  • Material/Organometallics Laboratory, Department of Chemistry, Atma Ram Sanatan Dharma College, University of Delhi, New Delhi-110 021, India
  • Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi City, Ishikawa 923-1292, Japan
autor
  • Department of Physics, Atma Ram Sanatan Dharma College, University of Delhi-110 021, India
  • Materials Research Laboratory, Department of Physics, Banaras Hindu University, Varanasi-221005, India
autor
  • Department of Chemistry, Maitreyi College, University of Delhi, Bapudham Complex, Chanakyapuri, New Delhi-110 021, India
autor
  • Material/Organometallics Laboratory, Department of Chemistry, Atma Ram Sanatan Dharma College, University of Delhi, New Delhi-110 021, India
Bibliografia
  • [1] Fang Y.K., Lee J.J., Thin Solid Films, 169 (1) (1989), 51.
  • [2] Bagher-Mohagheghi M.M., Shokooh-Saremi M., J. Phys. D Appl. Phys., 37 (8) (2004), 1248.
  • [3] Ju S.Y., Facchetti A., Xuan, L. J., Ishikawa F., Ye P.D., Zhou C.W., Marks T.J., Janes D.B., Nat. Nanotechnol., 2 (6) (2007), 378.
  • [4] Hosono H., Thin Solid Films, 515 (15) (2007), 6000.
  • [5] Granqvist C.G., Sol. Energ. Mat. Sol. C, 91 (17) (2007), 1529.
  • [6] Coutts T.J., Young D.L., Li X., Mater. Res. Bull., 25 (2000), 58.
  • [7] Ansari Z.A., Ansari S.G., Ko T., Oh J.H., Sensor. Actuat. B-Chem., 87 (1) (2002), 105.
  • [8] Hyodo T., Abe S., Shimizu Y., Egashira M., Sensor. Actuat. B-Chem., 93 (2003), 590.
  • [9] Guzman G., Dahmani B., Puetz J., Aegerter M.A., Thin Solid Films, 502 (1 – 2) (2006), 281.
  • [10] Niranjan R.S, Hwang Y.K., Kim D.K., Jhung S.H., Chang J. S., Mulla I.S., Mater. Chem. Phys., 92 (2 – 3) (2005), 384.
  • [11] Granqvist C.G., Thin Solid Films, 193 – 194 (1990), 730.
  • [12] Lampert C.M., Sol. Energ. Mat. Sol. C, 6 (1981), 1.
  • [13] Nanto H., Minami T., Takata S., J. Appl. Phys., 60 (2) (1986), 482.
  • [14] Rozati S.M., Akesteh S., Mater. Charact., 58 (4) (2007), 319.
  • [15] Sakka S, Kozuka H., Sol-Gel Processing, Kluwer Academic, New York, 2005.
  • [16] Singh R., Kumar M., Shankar S., Singh R, Ghosh A.K., Thakur O.P., Das B., Mat. Sci. Semicon. Proc., 31 (2015), 310.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-8942547a-79d2-4953-80ef-9bb7bf1f0508
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