Covering glass microspheres with Al₂O₃ or Aln by low-temperature atomic layer deposition

• Autorzy: Stankiewicz R. , Piątkowska A.

Warianty tytułu

PL

Pokrywanie mikrosfer szklanych Al₂O₃ lub AlN metodą niskotemperaturowego osadzania warstw atomowych

• Języki publikacji: EN

Abstrakty

EN

Thin layers of Al₂O₃ and AlN were deposited on the surface of borosilicate glass microspheres in an ALD reactor at 50 and 150°C, respectively. They were imaged by SEM microscopy. X-ray EDS spectroscopy was used to assess chemical composition but it was also the basis for a thickness determination method. Al₂O₃ layers between 20 and 100 nm were obtained, with a constant growth rate of 1.2 Å per deposition cycle. AlN formed continuous but always very thin films on the spheres, generally 5 to 10 nm, even if it was growing much thicker on control glass slides, at 0.8 Å per cycle.

PL

W reaktorze ALD osadzano cienkie warstwy Al₂O₃ i AlN na mikrosferach ze szkła borokrzemowego w temperaturach odpowiednio 50 i 150°c. obrazowano je przy pomocy skaningowego mikroskopu elektronowego. spektroskopia rentgenowska EDs była wykorzystywana do badania składu chemicznego, ale stanowiła także podstawę dla metody wyznaczania grubości warstw. otrzymano warstwy Al₂O₃ o grubościach od 20 do 100 nm przy stałej szybkości wzrostu 1,2 Å/cykl. AlN tworzył natomiast ciągłe, lecz zawsze bardzo cienkie warstwy (zwykle 5 do 10 nm), mimo że na kontrolnych płytkach szklanych uzyskiwano znacznie większe grubości, a szybkość wzrostu wynosiła 0,8 Å/cykl.

Słowa kluczowe

EN

ALD; EDS; dielectric layers; glass microspheres

PL

ALD; EDS; warstwy dielektryczne; mikrosfery szklane

• Wydawca: Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
• Czasopismo: Materiały Elektroniczne
• Rocznik: 2018
• Tom: T.46, nr 1-4
• Strony: 8--15
• Opis fizyczny: Bibliogr. 20 poz., rys.

Twórcy

autor

Stankiewicz R.

• Institute of Electronic Materials Technology, 133 Wólczyńska str., 01-919 Warsaw, Poland

autor

Piątkowska A.

• Institute of Electronic Materials Technology, 133 Wólczyńska str., 01-919 Warsaw, Poland

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