Application of modern semiconductor devices from silicon carbide for the construction of the synchronous rectifiers

• Autorzy: Krupa A.
• Języki publikacji: EN

Abstrakty

EN

In low-voltage isolated DC-DC converters, power losses due to the conduction of rectifying devices are significant. Using synchronous rectifiers instead of the conventional fast recovery diodes is an effective solution to this problem in most topologies. This paper provides results of computer simulation in PSpice of implementation SiC (silicon-carbide) diode in synchronous rectifier topology and shows advantages of this solution.

Słowa kluczowe

EN

SiC devices; synchronous rectifier; transformer

• Wydawca: Foundation for Young Scientists
• Czasopismo: Challenges of Modern Technology
• Rocznik: 2011
• Tom: Vol. 2, no. 2
• Strony: 13--15
• Opis fizyczny: Bibliogr. 5 poz., wykr., rys.

Twórcy

autor

Krupa A.

• Wydział Elektryczny, Politechnika Białostocka ul. Wiejska 45A, 15-351 Białystok

Bibliografia

• [1] Mihaiu, M.I. “Toward the “Ideal Diode” using power MOSFET in full wave synchronous rectifiers for low voltage power supplies”. International Symposium on Power Electronics, Electrical Drives, Automation and Motion. Speedam, 2008.
• [2] Mihaiu, M.I., and C.A. Valderrama. “The performance analysis of the synchronous rectifi ers”. 6th International Conference on Electromechanical and Power Systems, Chisinau, Rep. Moldova. October 4–6, 2007.
• [3] Shinohara, S. “Analysis of Power Losses in MOSFET Synchronous Rectifiers by Using Their Design Parameter”. Proceedings of International Symposium on Power Semiconductor Devices & ICs, Kyoto, 1998.
• [4] Xiao, L., and R. Oruganti. “Soft Switched PWM DC/DC converter with synchronous rectifiers”. Centre for Power Electronics Electrical Engineering Department National University of Singapore. IEEE, 1996.
• [5] Singh, R., and J. Richmond. “SiC Power Schottky Diodes in Power Factor Correction Circuits”. Cree, Inc. Application Note.