Behavioral modeling of stressed MOSFET

• Autorzy: Gniazdowski Z.
• Języki publikacji: EN

Abstrakty

EN

In this paper piezoconductivity phenomenon in MOSFET channel is discussed and extension of drain current model with possibility of stress consideration is proposed. Analysis of obtained model combined with examination of stress components inherent in the MOSFET channel as well as distributions of specific piezoconductance coefficients on a plane of channel can show which directions of transistor channel are desirable for improvement of MOSFET performances. This model gives possibility to predict optimal transistor channel orientation, for the given stress state in MOSFET channel. Possible simplification of this model is considered. In particular, stress state and significant piezoconductance coefficient distributions on planes f100g, f110g as well as f111g are analyzed. For assumed particular cases of stress state in the channel, final models of MOSFT for considered specific planes are given.

Słowa kluczowe

EN

piezoconductivity; stressed MOSFET; strained silicon; MOSFET model; SPICE model

• Wydawca: Warszawska Wyższa Szkoła Informatyki
• Czasopismo: Zeszyty Naukowe Warszawskiej Wyższej Szkoły Informatyki
• Rocznik: 2015
• Tom: nr 13
• Strony: 103--126
• Opis fizyczny: Bibliogr. 18 poz., rys., wykr.

Twórcy

autor

Gniazdowski Z.

• Warsaw School of Computer Science

Bibliografia

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