Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

James, Jonathan Ch.; Haran, Terence L.; Lane, Sarah E.

doi:10.24425/opelre.2023.144570

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Tytuł artykułu

Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

Autorzy

James Jonathan Ch. , Haran Terence L. , Lane Sarah E.

Treść / Zawartość

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DOI

10.24425/opelre.2023.144570

Warianty tytułu

Konferencja

Quantum Structure Infrared Photodetectors - QSIP : International Conference 2020/2022 (11 ; 2022 ; Kraków, Poland)

Języki publikacji

Abstrakty

Infrared detector technologies engineered from III-V semiconductors such as strained-layer superlattice, quantum well infrared photodetectors, and quantum dot infrared photodetectors provide additional flexibility to engineer bandgap or spectral response cut-offs compared to the historical high-performance detector technology of mercury/cadmium/telluride. The choice of detector cut-off depends upon the sensing application for which the system engineer is attempting to maximize performance within an expected ensemble of operational scenarios that define objects or targets to be detected against specific environmental backgrounds and atmospheric conditions. Sensor performance is typically characterised via one or more metrics that can be modelled or measured experimentally. In this paper, the authors will explore the impact of detector cut-off wavelength with respect to different performance metrics such as noise equivalent temperature difference and expected target detection or identification ranges using analytical models developed for several representative sensing applications encompassing a variety of terrestrial atmospheric conditions in the mid-wave and long-wave infrared wavelength bands. The authors will also report on their review of recently published literature concerning the relationships between cut-off wavelength and the other detector performance characteristics such as quantum efficiency or dark current for a variety of detector technologies.

Słowa kluczowe

infrared focal plane arrays III-V semiconductor infrared detector technologies infrared sensor performance modelling infrared sensor design mid-wave and longwave infrared sensors

Wydawca

Stowarzyszenie Elektryków Polskich
Polska Akademia Nauk
Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego

Czasopismo

Opto-Electronics Review

Rocznik

2023

Tom

Vol. 31, Special Issue

Strony

art. no. e144570

Opis fizyczny

Bibliogr. 78 poz., rys., wykr.

Twórcy

autor

James Jonathan Ch.

chris.james@gtri.gatech.edu

Electro-Optical Systems Laboratory, Georgia Tech Research Institute, 925 Dalney St. NW, Atlanta, GA 30332, USA

https://orcid.org/0000-0002-2408-2552

autor

Haran Terence L.

Electro-Optical Systems Laboratory, Georgia Tech Research Institute, 925 Dalney St. NW, Atlanta, GA 30332, USA

autor

Lane Sarah E.

Electro-Optical Systems Laboratory, Georgia Tech Research Institute, 925 Dalney St. NW, Atlanta, GA 30332, USA

Bibliografia

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Opracowanie rekordu ze środków MEiN, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2022-2023).

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