Optimization of optical characteristics of In0.29Ga0.71As0.99N0.01/GaAs straddled nano-heterostructure

• Autorzy: Sandhya K. , Bhardwaj G. , Dolia R. , Lal P. , Kumar S. , Dalela S. , Rahman F. , Alvi P. A.

Identyfikatory

DOI

10.1016/j.opelre.2018.06.003

• Języki publikacji: EN

Abstrakty

EN

Designing of a nanoscale Quantum Well (QW) heterostructure with a well thickness of ~60 Å is critical for many applications and remains a challenge. This paper has a detailed study directed towards designing of In_0.29Ga_0.71As_0.99N_0.01/GaAs straddled nanoscale-heterostructure having a single QW of thickness ~60 Å and optimization of optical and lasing characteristics such as optical and mode gain, differential gain, gain compression, anti-guiding factor, transparency wavelength, relaxation oscillation frequency (ROF), optical power and their mutual variation behavior. The outcomes of the simulation study imply that for the carrier concentration of ~2 × 10¹⁸cm⁻³ the optical gain of the nano-heterostructure is of 2100 cm⁻¹ at the wavelength is of 1.30 μm. Though the obtained gain is almost half of the gain of InGaAlAs/InP heterostructure, but from the wavelength point of view the InGaAsN/GaAs nano-heterostructure is also more desirable because the 1.30 μm wavelength is attractive due to negligible dispersion in the silica based optical fiber. Hence, the InGaAsN/GaAs nano-heterostructure can be very valuable in optical fiber based communication systems.

Słowa kluczowe

EN

InGaAsN; optical gain; gain compression; heterostructure

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2018
• Tom: Vol. 26, No. 3
• Strony: 210--216
• Opis fizyczny: Bibliogr. 44 poz., wykr.

Twórcy

autor

Sandhya K.

• Department of Physics, Banasthali Vidyapith, Banasthali, 304022, Rajasthan, India

autor

Bhardwaj G.

• Department of Electronics, Banasthali Vidyapith, Banasthali, 304022, Rajasthan, India

autor

Dolia R.

• Department of Electronics, Banasthali Vidyapith, Banasthali, 304022, Rajasthan, India

autor

Lal P.

• Department of Physics, Banasthali Vidyapith, Banasthali, 304022, Rajasthan, India

autor

Kumar S.

• Electronic Materials & Nanomagnetism Lab, Department of Applied Physics, Amity School of Applied Sciences, Amity University Haryana, Gurgaon, 122413, India

autor

Dalela S.

• Department of Pure & Applied Physics, University of Kota, Kota, Rajasthan, India

autor

Rahman F.

• Department of Physics, Aligarh Muslim University, Aligarh, 202002, U.P, India

autor

Alvi P. A.

• Department of Physics, Banasthali Vidyapith, Banasthali, 304022, Rajasthan, India

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Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).