A comparative study of dip coating and spray pyrolysis methods for synthesizing ITO nanolayers by using Ag colloidal sol

• Autorzy: Rajabi N , Heshmatpour F , Malekfar R , Bahari-Poor H R , Abyar S

Identyfikatory

DOI

10.2478/s13536-013-0165-x

• Języki publikacji: EN

Abstrakty

EN

Indium tin oxide (ITO) films were deposited on glass substrates by dip-coating and thermal pyrolysis methods. Sn (IV) is often used in the spray method as a precursor salt, but in this research we have employed a new procedure that uses Sn (II) and In(NO3)3 for preparation of transparent conductive thin films. Then, colloidal Ag was deposited on the ITO layers in order to compare the two synthesis methods, and the structural and electrical properties of the resultant films were investigated by FESEM, XRD, and four-terminal resistometry. The obtained films are polycrystalline with a preferred orientation of (200). The XRD patterns of the films indicate that in both films, the Sn phase is crystallized separately from In2O3. The presence of a Sn peak and the overall low intensity of XRD peaks suggest relative crystallization of ITO structure. For this reason, Ag films were deposited by dip coating method using a colloidal sol. By analyzing the XRD patterns of Ag-ITO films after eliminating the Sn peak, the increased intensity of the peaks confirmed the relatively good crystallization of the ITO films. The results show that the films with a sheet resistance as low as 2 × 10^-2 W cm, which is beneficial for solar cells, were achieved.

Słowa kluczowe

EN

dip-coating; spray pyrolysis; crystallization; Ag colloid

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2014
• Tom: Vol. 32, No. 1
• Strony: 102--106
• Opis fizyczny: Bibliogr. 24 poz., rys., wykr.

Twórcy

autor

Rajabi N

• Department of Physics, Tarbiat Modares University, Tehran P.O. Box 14115-175, Islamic Republic of Iran
• Department of Physics, Islamic Azad University, North Tehran Branch, Tehran, Islamic Republic of Iran

autor

Heshmatpour F

• Department of Chemistry, Faculty of Science, K.N. Toosi University of Technology, P.O.Box 16315-1618, Tehran,15418 Islamic Republic of Iran

autor

Malekfar R

• Department of Physics, Tarbiat Modares University, Tehran P.O. Box 14115-175, Islamic Republic of Iran

autor

Bahari-Poor H R

• Institute of Microengineering and Nanoelectronics (IMEN), Level 4, Research Complex, University Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia

autor

Abyar S

• Department of Chemistry, Faculty of Science, K.N. Toosi University of Technology, P.O.Box 16315-1618, Tehran,15418 Islamic Republic of Iran

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