Material parameters of antimonides and amorphous materials for modelling the mid-infrared lasers

• Autorzy: Piskorski Ł. , Sarzała R. P.

Identyfikatory

DOI

10.5277/oa160207

• Języki publikacji: EN

Abstrakty

EN

The proper modelling of semiconductor device operation with full complexity of many interrelated physical phenomena taking place within its volume is possible only when the material parameters which appear in each part of the self-consistent model are known. Therefore, it is necessary to include in calculations the material composition, temperature, carrier concentration, and wavelength dependences in electrical, thermal, recombination and optical models. In this work we present a complete set of material parameters which we obtained basing mostly on the experimental data found in several dozen publications. To refine the number of equations, we restrict the material list to those which are typically used in edge-emitting lasers and vertical-cavity surface-emitting lasers designed for mid-infrared emission.

Słowa kluczowe

EN

material parameters; computer simulation; mid-infrared devices; GaSb-based lasers

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2016
• Tom: Vol. 46, nr 2
• Strony: 227--240
• Opis fizyczny: Bibliogr. 50 poz., rys., tab.

Twórcy

autor

Piskorski Ł.

• Photonics Group, Institute of Physics, Lodz University of Technology, Wólczańska 219, 90-924 Łódź, Poland

autor

Sarzała R. P.

• Photonics Group, Institute of Physics, Lodz University of Technology, Wólczańska 219, 90-924 Łódź, Poland

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Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.