TiO2 thin films grown on SiO2–Si(111) by the reactive evaporation method

• Autorzy: Grodzicki M , Wasielewski R , Mazur P , Zuber S , Ciszewski A
• Języki publikacji: EN

Abstrakty

EN

TiO2 thin films were grown on silicon substrates using an electron-beam evaporator. Grainy TiO was used as the evaporation material. Temperature substrate during TiO2 growth was relatively low (about 150 °C), what is important for many optoelectronic devices and multilayers mirrors. High vacuum condition allows to maintain clean surfaces substrates before and during oxide growth. The morphology of titanium oxide thin films was ex situ investigated using atomic force microscopy operating in contact mode, X-ray photoelectron spectroscopy, X-ray powder diffractometry, and by means of a contact angle analyzer. The influence of annealing treatment and exposure to UV–VIS radiation on the morphology has been also discussed.

Słowa kluczowe

EN

titanium oxide; wettability; X-ray photoelectron spectroscopy; UV radiation

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2013
• Tom: Vol. 43, nr 1
• Strony: 99--107
• Opis fizyczny: Bibliogr. 18 poz., rys., tab., wykr.

Twórcy

autor

Grodzicki M

• Institute of Experimental Physics, University of Wrocław, plac Maxa Borna 9, 50-204 Wrocław, Poland
• On research stay at Wrocław Research Centre EIT+, Stabłowicka 147, 54-066 Wrocław, Poland

autor

Wasielewski R

• Institute of Experimental Physics, University of Wrocław, plac Maxa Borna 9, 50-204 Wrocław, Poland
• On research stay at Wrocław Research Centre EIT+, Stabłowicka 147, 54-066 Wrocław, Poland

autor

Mazur P

• Institute of Experimental Physics, University of Wrocław, plac Maxa Borna 9, 50-204 Wrocław, Poland

autor

Zuber S

• Institute of Experimental Physics, University of Wrocław, plac Maxa Borna 9, 50-204 Wrocław, Poland

autor

Ciszewski A

• Institute of Experimental Physics, University of Wrocław, plac Maxa Borna 9, 50-204 Wrocław, Poland

Bibliografia

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