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Photoresistor based on ZnO nanorods grown on a p-type silicon substrate

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EN
Abstrakty
EN
In this work we discuss a method of preparation of a highly sensitive light detector based on ZnO nanorods. A photoresistor constructed by us is based on a heterojunction between high quality ZnO nanorods and high resistivity p-type Si used as a substrate for nanorods’ deposition. ZnO nanorods are grown by a modified version of a microwave assisted hydrothermal method which allows for growth of high quality ZnO nanorods in a few minutes. The obtained photoresistor responds to a wide spectral range of light starting from near infrared (IR) to ultraviolet (UV). Properties of the detector are evaluated. We propose the use of the detector as an optical switch.
Twórcy
  • Institute of Physics, Polish Acad. of Sciences, Al. Lotników 32/46, 02–668 Warsaw, Poland
  • Institute of Physics, Polish Acad. of Sciences, Al. Lotników 32/46, 02–668 Warsaw, Poland
  • Institute of Physics, Polish Acad. of Sciences, Al. Lotników 32/46, 02–668 Warsaw, Poland
autor
  • Institute of Physics, Polish Acad. of Sciences, Al. Lotników 32/46, 02–668 Warsaw, Poland
  • Institute of Physics, Polish Acad. of Sciences, Al. Lotników 32/46, 02–668 Warsaw, Poland
autor
  • Institute of Physics, Polish Acad. of Sciences, Al. Lotników 32/46, 02–668 Warsaw, Poland
  • Cardinal S. Wyszyński University, ul. Dewajtis 5, 01–815 Warsaw, Poland
Bibliografia
  • [1] L. Wachnicki, S. Gieraltowska, B. S. Witkowski, S. Figge, D. Hommel, E. Guziewicz, M. Godlewski, Characterization of n-ZnO/p-GaN heterojunction for optoelectronic applications, Acta Phys. Pol. A 124 (2013) 869-872.
  • [2] S. Gieraltowska, L. Wachnicki, B. S. Witkowski, M. Godlewski, E. Guziewicz, Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications, Thin Solid Films 520 (2012) 4694-4697.
  • [3] M. Godlewski, E. Guziewicz, J. Szade, A. Wojcik-Glodowska, L. Wachnicki, T. Krajewski, K. Kopalko, R. Jakiela, S. Yatsunenko, E. Przezdziecka, P. Kruszewski, N. Huby, G. Tallarida, S. Ferrari, Vertically stacked non-volatile memory devices - material considerations, Microelectron. Eng. 85 (2008) 2434-2438.
  • [4] R. Pietruszka, B. S. Witkowski, S. Gieraltowska, P. Caban, L. Wachnicki, E. Zielony, K. Gwozdz, P. Bieganski, E. Placzek-Popko, M. Godlewski, New efficient solar cell structures based on zinc oxide nanorods, Sol. Energy Mater. Sol. Cells 143 (2015) 99-104.
  • [5] G. Luka, T. A. Krajewski, B. S. Witkowski, G. Wisz, I. S. Virt, E. Guziewicz, M. Godlewski, Aluminum-doped zinc oxide films grown by atomic layer deposition for transparent electrode applications, J. Mater. Sci. Mater. Electron. 22 (2011) 1810-1815.
  • [6] B. N. Denisov, A photoresistor as a multifunctional optoelectronic element, J. Commun. Technol. Electron. 52 (2007) 478-481.
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  • [9] A. Asgari, E. Ahmadi, M. Kalafi, AlxGa1−xN/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures, Microelectron. J. 40 (2009) 104-107.
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  • [11] B. S. Witkowski, L. Wachnicki, S. Gieraltowska, P. Sybilski, K. Kopalko, M. Stachowicz, M. Godlewski, UV detector based on zinc oxide nanorods obtained by the hydrothermal method, Phys. Status Solidi C 11 (2014) 1447-1451.
  • [12] B. S. Witkowski, L. Wachnicki, S. Gieraltowska, P. Dluzewski, A. Szczepanska, J. Kaszewski, M. Godlewski, Ultra-fast growth of the monocrystalline zinc oxide nanorods from the aqueous solution, Int. J. Nanotechnol. 11 (2014) 758-772.
  • [13] F. J. Liu, Z. F. Hu, J. Sun, Z. J. Li, H. Q. Huang, J. W. Zhao, X. Q. Zhang, Y. S. Wang, Ultraviolet photoresistors based on ZnO thin films grown by P-MBE, Solid-State Electron. 68 (2012) 90-92.
  • [14] H. Zhou, G. Fang, L. Yuan, C. Wang, X. Yang, H. Huang, C. Zhou, X. Zhao, Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature, Appl. Phys. Lett. 94 (2009) 013503.
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  • [16] Z. Guo, D. Zhao, Y. Liu, D. Shen, J. Zhang, B. Li, Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n–Si heterojunction, Appl. Phys. Lett. 93 (2008) 163501.
  • [17] B. S. Witkowski, L. Wachnicki, S. Gieraltowska, A. Reszka, B. J. Kowalski, M. Godlewski, Low-temperature cathode luminescence investigations of high-quality zinc oxide nanorods, Microsc. Microanal. 21 (2015) 564-569.
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  • [19] J. A. Aranovich, D. G. Golmayo, A. L. Fahrenbruch, R. H. Bube, Photovoltaicproperties of ZnO/CdTe heterojunctions prepared by spray pyrolysis, J. Appl. Phys. 51 (1980) 4260-4268.
  • [20] A. E. Rakhshani, Optoelectronic properties of p-n and p-i-n heterojunction devices prepared by electrodeposition of n-ZnO on p-Si, J. Appl. Phys. 108 (2010) 094502.
  • [21] Z. Guo, D. Zhao, Y. Liu, D. Shen, J. Zhang, B. Li, Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction, Appl. Phys. Lett. 93 (2008) 163501.
Uwagi
PL
Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017)
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Bibliografia
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bwmeta1.element.baztech-83f7d79f-c6ff-47e3-9db4-c7e5b50e3ce3
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