Correlation with annealing temperature of pure and doped ZnO thin film

• Autorzy: Chabane F. , Moummi N. , Benramache S. , Belahssen O. , Bensahal D.
• Języki publikacji: EN

Abstrakty

EN

Transparent conducting pure and doped zinc oxide thin films with cobalt and indium were deposited on glass substrate by ultrasonic spray method. The thin films were deposited at 350 °C and annealed 500 °C. The direct correlation between the difference of the crystallite size (ΔG) and the difference of the Urbach energy (ΔEu) suggests that the crystallites sizes of the films are predominantly influenced by the disorder of the thin films. The crystallites size in the thin films depend by the disorder (less defects), where the minimum disorder confirmed the high crystallinity. The correlation of the conductivity before and after annealing temperature also indicates that the measurement in the electrical conductivity of the films by the optical band gap was equal; it is predominantly influenced by the transition tail width of undoped and doped ZnO thin films. It will be shown that the conductivity of undoped and doped ZnO is directly correlated with the band gap of the host material. The model proposed of pure and doped ZnO thin film with annealing temperature was investigated.

Słowa kluczowe

EN

ZnO; semiconductor doping; thin films; correlation

PL

ZnO; tlenek cynku; domieszkowanie; cienkie warstwy; korelacja

• Wydawca: Institute of Heat Engineering, Warsaw University of Technology
• Czasopismo: Journal of Power Technologies
• Rocznik: 2013
• Tom: Vol. 93, nr 4
• Strony: 202--206
• Opis fizyczny: Bibliogr. 14 poz., tab., wykr.

Twórcy

autor

Chabane F.

• Mechanical Department, Faculty of Technology University of Biskra 07000, Algeria

autor

Moummi N.

autor

Benramache S.

• Material Sciences Department, Faculty of Science University of Biskra 07000, Algeria

autor

Belahssen O.

• Material Sciences Department, Faculty of Science University of Biskra 07000, Algeria

autor

Bensahal D.

• Mechanical Department, Faculty of Technology University of Biskra 07000, Algeria

Bibliografia

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