Investigation of structural, optical and electrical properties of (Ti,Nb)Ox thin films deposited by high energy reactive magnetron sputtering

• Autorzy: Mazur M. , Kaczmarek D. , Prociow E. , Domaradzki J. , Wojcieszak D. , Bochenski J

Identyfikatory

DOI

10.2478/s13536-013-0195-4

• Języki publikacji: EN

Abstrakty

EN

In this work the results of investigations of the titanium-niobium oxides thin films have been reported. The thin films were manufactured with the aid of a modified reactive magnetron sputtering process. The aim of the research was the analysis of structural, optical and electrical properties of the deposited thin films. Additionally, the influence of post-process annealing on the properties of studied coatings has been presented. The as-deposited coatings were amorphous, while annealing at 873 K caused a structural change to the mixture of TiO2 anatase-rutile phases. The prepared thin films exhibited good transparency with transmission level of ca. 50 % and low resistivity varying from 2 Ωcm to 5×10−2 Ωcm, depending on the time and temperature of annealing. What is worth to emphasize, the sign of Seebeck coefficient changed after the annealing process from the electron to hole type electrical conduction.

Słowa kluczowe

EN

(Ti Nb)Ox thin films; transparent oxide semiconductor; p-type electrical conduction; niobium doped titanium dioxide; transparent electronics

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2014
• Tom: Vol. 32, No. 3
• Strony: 457--464
• Opis fizyczny: Bibliogr. 21 poz., rys., wyk.

Twórcy

autor

Mazur M.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw

autor

Kaczmarek D.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw

autor

Prociow E.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw

autor

Domaradzki J.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw

autor

Wojcieszak D.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw

autor

Bochenski J

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw

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