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The effect of titanium nitride (TiN) thickness as the support layer for carbon nanotubes (CNTs) growth was investigated by depositing three different thicknesses: 20 nm, 50 nm and 100 nm. This TiN support layer was deposited on SiO2 pads before depositing nickel (Ni) as the catalyst material. The Ni distribution on different TiN thicknesses was studied under hydrogen environment at 600°C. Then, the samples were further annealed at 600°C in acetylene and hydrogen environment for CNTs growth. The results show that, the optimum TiN thickness was obtained for 50 nm attributed by the lowest D to G ratio (0.8).
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Rocznik
Tom
Strony
963--966
Opis fizyczny
Bibliogr. 18 poz., fot., tab., wykr.
Twórcy
autor
- Universiti Malaysia Perlis (UniMAP), Geopolymer & Green Technology, Centre of Excellence (CEGeoGTech), Perlis, Malaysia
- Universiti Malaysia Perlis (UniMAP), Faculty of Electronic Engineering Technology, Perlis, Malaysia
autor
- Universiti Malaysia Perlis (UniMAP), Faculty of Electronic Engineering Technology, Perlis, Malaysia
- Universiti Putra Malaysia, Faculty of Science, Department of Physic, Applied Electromagnetic Laboratory, 43400 Serdang, Selangor, Malaysia
autor
- Institut Teknologi Sepuluh Nopember, Faculty of Science and Analytical Data, Department of Physic, Campus ITS Sukolilo-Surabaya 60111, Indonesia
- Universiti Malaysia Perlis (UniMAP), Geopolymer & Green Technology, Centre of Excellence (CEGeoGTech), Perlis, Malaysia
Bibliografia
- [1] H. Ceric, S. Selberherr, Materials Science and Engineering: R: Reports 71, 53-86, (2011).
- [2] N. Lin, H. Wang, P. Dixit, T. Xu, S. Zhang, J. Miao, J. Electrochem. Society 156, 23-27 (2009).
- [3] Li Hong; Liu, Wei; Cassell, Alan M.; Kreupl, Franz; Banerjee, Kaustav, IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) 60 (9), 2870-2876 (2013).
- [4] B. Uhlig, A., A. Todri-Sanial et. al., Materials Science, IEEE International Interconnect Technology Conference (IITC), 16-18 (2018).
- [5] S. Chen et. al., Imaps Nordic Conference on Microelectronics Packaging (NordPac), 113-119, (2017).
- [6] M.H. Rümmeli, A. Bachmatiuk, F. Börrnert, F. Schäel, I. Ibrahim, K. Cendrowski, G. Simha-Martynkova, D. Plachá, E. Borowiak-Palen, G. Cuniberti, G.; et al., Nanoscale Res. Lett. 6, 303 (2011).
- [7] A. Magrez, J. W. Seo, R. Smajda, M. Mionic, L. Forró, Materials 3, 4871-4891 (2010).
- [8] J. Prasek, J. Drbohlavova, J. Chomoucka, J. Hubalek, O. Jasek, V. Adam, R.J. Kizek, Mater. Chem. 21, 15872-15884 (2011).
- [9] P. Serp, E. Castillejos, Chem. Cat. Chem. 2, 41-47 (2009).
- [10] C.C. Yap, Dunlin Tan, C. Brun, H. Li, Edwin H.T. Teo, B. Dominique, B.K. Tay, IEEE 5th International Nanoelectronics Conference (INEC), pp. 4-6 (2013).
- [11] J.B.A., Kpetsu, P. Jedrzejowski, C. Côté et al., Nanoscale Res Lett. 5, 539 (2010).
- [12] W.H. Wang, Y.R. Peng, C.T. Kuo, Diamond & Rel. Mater. 14, 1906-1910 (2005).
- [13] Y. Zhang, J. Liu, R. He, Q. Zhang, X. Zhang, J. Zhu, Chem. Mater. 13, 3899-3905 (2001).
- [14] H. Bentmann, A.A. Demkov, R. Gregory, S. Zollner, Phys. Rev. B 78, 205302 (2008).
- [15] Y. Wang, Z. Luo, B. Li, P.S. Ho, J. Appl. Phys. 101 (2007).
- [16] Siti S. Mat Isa, Muhammad M. Ramli, AIP Conference Proceedings 1621, 40 (2014).
- [17] S. Esconjauregui, S. Bhardwaj, J. Yang, C. Castellarin-Cudia, R. Xie, L. D’Arsie, T. Makaryan, H. Sugime, S. Eslava, C. Cepek, J. Robertson, Carbon 73, 13-24 (2014).
- [18] Hayley Zhang, Ben Wang, Billyde Brown, Applied Surface Science 521 (2020).
Uwagi
1. This work was supported by the Ministry of Education and Department of Physics, Faculty of Science, Universiti Putra Malaysia under Fundamental Research Grant Scheme (FRGS/1/2018/STG07/UPM/02/6). Authors would also like to thanks Madam Siti Salwa Mat Isa.
2. Opracowanie rekordu ze środków MNiSW, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2024).
Typ dokumentu
Bibliografia
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bwmeta1.element.baztech-7f0b1ee8-7418-4556-a75a-881af1f22984