Raman scattering studies of MBE-grown ZnTe nanowires

• Autorzy: Szuszkiewicz W. , Morhange J. F. , Dynowska E. , Janik E. , Zaleszczyk W. , Presz A. , Domagała J. Z. , Caliebe W. , Karczewski G. , Wojtowicz T.
• Języki publikacji: EN

Abstrakty

EN

We report on the first studies of the optical properties of MBE-grown ZnTe nanowires (NWs). The growth of ZnTe NWs was based on the Au-catalyzed vapour–liquid–solid mechanism and was performed on (001), (011), or (111)B-oriented GaAs substrates. Investigated NWs have a zinc-blende structure, the average diameter of about 30 nm, and typical length between 1 and 2 μm. Their growth axes are oriented along <111>-type directions of the substrate. The structural characterization of the NWs was performed by means of X-ray diffraction, using the synchrotron radiation corresponding to the wavelength of CuKα1 radiation W1 beamline at Hasylab DESY). The macro-Raman spectra of either as-grown NWs on GaAs substrate or of NWs removed from substrate and deposited onto Si were collected at temperatures from 15 K to 295 K using Ar+ and Kr+ laser lines. Strong enhancement of ZnTe-related LO-phonon structure was found for an excitation close to the exciton energy. Our studies revealed also the presence of small trigonal Te precipitates, typical of tellurium compounds.

Słowa kluczowe

EN

ZnTe nanowire; Raman scattering; MBE growth; lattice dynamics

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 4
• Strony: 1054--1059
• Opis fizyczny: Bibliogr. 27 poz., rys., wyk.

Twórcy

autor

Szuszkiewicz W.

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Morhange J. F.

• Institut des Nanosciences de Paris, CNRS, UPMC, 140 rue de Lourmel, 75015 Paris, France

autor

Dynowska E.

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Janik E.

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Zaleszczyk W.

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Presz A.

• Institute of High Pressure Physics, PAS, ul. Sokołowska 29/37, 01-142 Warsaw, Poland

autor

Domagała J. Z.

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Caliebe W.

• Hasylab at DESY, Notkestr. 85, D-22603 Hamburg, Germany

autor

Karczewski G.

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Wojtowicz T.

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

Bibliografia

• [1] LI Y.,DING Y.,WANG Z., Adv. Mater. 11 (1999), 847.
• [2] LI L.,YANG Y.,HUANG X.,LI G.,ZHANG L., J. Phys. Chem. B, 109 (2005), 12394.
• [3] HUO H.B., DAI L., XIA D.Y.,RAN G.Z., YOU L.P., ZHANG B.R., QUI G.G., J. Nanosci. Nanotechnol., 6 (2006), 1182.
• [4] HUO H.B., DAI L., LIU C., SOU L.P., YANG W.Q., MA R.M., RAN G.Z., QUI G.G., Nanotechn., 17 (2006), 5912.
• [5] JANIK E., SADOWSKI J., DŁUŻEWSKI P., KRET S., BACZEWSKI T., PETROUTCHIK A., ŁUSAKOWSKA E., WRÓBEL J.,ZALESZCZYK W.,KARCZEWSKI K.,WOJTOWICZ T.,PRESZ A., Appl. Phys. Lett. 89 (2006), 133114.
• [6] SCHLECHT S., YOSEF M., ZHAO L., PIPPEL E., STEINHART M., Z. Anorg. Allg. Chem., 632 (2006), 2157.
• [7] FASOLI A.,COLLI A., HOFMANN S., DUCATI C.,ROBERTSON J., FERRARI A.C., Phys. Stat. Sol. B, 243 (2006), 3301.
• [8] ZHAO L., YOSEF M., PIPPEL E., HOFMEISTER H., STEINHART M., GÖSELE U., SCHLECHT S., Angew. Chem. Int. Ed., 45 (2006), 8042.
• [9] ZHANG J.Y.,YU W.W.,Appl. Phys. Lett., 89 (2006), 123108.
• [10] KRAHNE R., CHILLA G., SCHÜLLER C., CARBONE L., KUDERA S., MANNARINI G., MANNA L., HEITMANN D.,CINGOLANI R., Nanoletters, 6 (2006), 478.
• [11] ENCULESCU I., SIMA M., ENCULESCU M., ENACHE M., ION L., ANTOHE S., NEUMANN R., Phys. Stat. Sol. B, 244 (2007), 1607.
• [12] SELVIG E., HADZIALIC S., SKAULI T., STEEN H., HANSEN V., TROSDAHL-IVERSENL., VAN RHEENEN A.D., LORENTZEN T,HAAKENAASEN R., Phys. Scr. T, 126 (2006), 115.
• [13] NOBILE C., FONOBEROV V.A., KUDERA S., DELLA TORE A., RUFFINO A., CHILLA G., KIPP T., HEITMANN D.,MANNA L.,CINGOLANI R.,BALANDIN A.A.,KRAHNE R.,Nanoletters, 7 (2007), 476.
• [14] FU X.L.,LI L.H.,TANG W.H., Solid State Commun., 138 (2006), 139.
• [15] SHAN C.X.,LIU Z.,ZHANG X.T.,WONG C.C.,HARK S.K., Nanotechnology, 17 (2006), 5561.
• [16] WEINSTEIN B.A., Phys. Stat. Sol. B, 244 (2007), 368.
• [17] LIN M.,SUDHIRANJAN T.,BOOTHROYD C.,LOH K.P.,Chem. Phys. Lett., 400 (2004), 175.
• [18] LU H.-Y.,CHU S.-Y.,CHANG C.-C., J. Cryst. Growth, 280 (2005), 173.
• [19] ZHANG X.,ZHANG Y.,SONG Y.,WANG Z.,YU D., Physica E, 28 (2005), 1.
• [20] HAYASHI S.,SANDA H.,AGATA M.,YAMAMOTO K., Phys. Rev. B, 40 (1989) 5544.
• [21] GROSSE P., RICHTER W., [in:] Landolt-Börnstein Numerical Data and Functional Relationships in Science and Technology, New Series, Vol. 17c, O. Madelung (Ed.), Springer, Berlin, 1983, p. 109.
• [22] SCOTT J.F.,LEITE R.C.C.,DAMEN T.C., Phys. Rev. 188 (1969), 1285.
• [23] IRVIN J.C.,LACOMBE J., J. Appl. Phys. 41 (1970), 1444.
• [24] SCHMIDT R.L.,MCCOMBE B.D.,CARDONA M.,Phys. Rev. B, 11 (1975) 746.
• [25] KLOCHIKHIN A.A., MOROZENKO YA.V., PERMEGOROV S.A., Fiz. Tverd, Tela, 20 (1978), 3557; English translation Sov. Phys. Solid State, 20 (1978), 2057.
• [26] FENG Z.C.,PERKOWITZ S.,BECLA P.,Solid State Commun., 78 (1991), 1011.
• [27] PÄSSLER R., GRIEBL E.,RIEPL H., LAUTNER G.,BAUER S., PREIS H., GEBHARDT W,BUDA B., AS D.J., SCHIKORA D.,LISCHKA K.,PAPAGELIS K.,VES S.,J. Appl. Phys., 86 (1999), 4403.