BSIM3v3 to EKV2.6 Model Parameter Extraction and Optimisation using LM Algorithm on 0.18μ Technology node

• Autorzy: Singh K. , Jain P.

Identyfikatory

DOI

10.24425/118139

• Języki publikacji: EN

Abstrakty

EN

The industry standard BSIM3v3 and BSIM4.0 have been replaced by BSIM6.0 compact MOSFET model for deep submicron technology node. The BSIM6.0 is next generation, defacto industry standard model for bulk MOSFET. This model is charge based which is continuous from weak to strong inversion of operation. The core of analytical and physical BSIM6 model[3] is charge, with drain current equation expressed in form of source(q_s) and drain charge(q_d). This model has all its governing equations continuous and can be used to develop design methodology using IC based approach. But its method of computing q_s and q_d is complicated which is different from Vittoz traditional charge calculation method. The continuous interpolation equation of drain current as adopted by EKV2.6 although is empirical but its compact expression is preferred by analog designer to get intuitive design guidance. BSIM6 is a combined effort by BSIM and EKV modeling groups based on charge based continuous equations. Although EKV2.6 model is not valid for deep submicron process as it only includes submicron short channel effects like velocity saturation (VS), vertical field mobility reduction (VFMR), Drain induced barrier lowering (DIBL), channel length modulation (CLM) etc. But it still offers some benefits to have first cut design methodology because of its much simplified analytical equations. The inversion coefficient (IC) has found extensive acceptance in designer community as it offers enhanced design elegance in EKV then more complicated BSIM model. This paper discuses first step in analog design process by extracted core EKV2.6 intrinsic model parameters from industry standard BSIM3v3 model on 0.18μ technology node. The 0.18μ technology is chosen as it is still more common technology node in analog circuit design. The model parameters are extracted for different bins and optimisation is done using nonlinear optimisation LM algorithm. The optimised EKV2.6 parameters are validated with current-voltage (I-V), intrinsic voltage gain (A_vi) and Early voltage circuit parameter (V_A) with BSIM3v3 model.

Słowa kluczowe

EN

EKV2.6; BSIM3v3; specific current IS; optimisation; LM algorithm

• Wydawca: Polish Academy of Sciences, Committee of Electronics and Telecommunication
• Czasopismo: International Journal of Electronics and Telecommunications
• Rocznik: 2018
• Tom: Vol. 64, No. 1
• Strony: 5--11
• Opis fizyczny: Bibliogr. 12 poz., tab., wykr.

Twórcy

autor

Singh K.

• Department of Electronics and Communication Engineering, Jaypee Institute of Information Technology, Noida, India

autor

Jain P.

• Apache Design Solutions, Banglore, India

Bibliografia

• [1] A.B. Bhattacharyya, “Compact MOSFET Models for VLSI Design ”John Wiley and Sons, Ltd, 2009.
• [2] Y. Cheng, C. Hu “MOSFET MODELING and BSIM3 USER’S GUIDE” John Wiley and Sons, Ltd, 2008.
• [3] Y. S. Chauhan et. al. “BSIM6.0 MOSFET Compact Model” Technical Manual, May 2013.
• [4] A. Mangla, M. A, Chalkiadaki, F. Fadhuile, T. Taris, Y. Deval, C. C. Enz “Design Methodology for ultra low-power analog circuits using next generation BSIM6.0 MOSFET compact model”, Microelectronics Journal, Vol. 44, pp. 570-575, 2013.
• [5] M. Bucher, C. Lallement, C. Enz, F. Theodoloz, F. Krummenacher, “The EPFL-EKV 2.6 MOSFET Model Equations for Simulation ” Technical Report, EPFL, June 1997.
• [6] C.C. Enz, F. Krummenacher and E.A. Vittoz, “An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Application ”, Analog Integrated Circuits and Systems Processing Journal, Vol. 8, pp. 83-114, 1995.
• [7] C.C. Enz, E.A. Vittoz “Charge-Based MOS Transistor Modeling: The EKV Model for Low power and RF IC design ” John Wiley and Sons, Ltd, 2006.
• [8] M. Bucher, “Analytical Modeling of the MOS Transistor for Circuit Simulation ” Ph. D. Thesis Nº 2114(1999), Swiss Federal Institute of Technology(EPFL), Lausanne, Switzerland.
• [9] D. Stefanovic and M. Kayal “Structured Analog CMOS Design ”Springer Publications, 2008.
• [10] D. E. Ward and K. Doganis, “Optimized Extraction of MOS Model Parameters”, IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems ,Vol. CAD-1, No. 4, pp. 163-168, October 1982.
• [11] K. Doganis and D. L. Scharfetter, “General Optimization and Extraction of IC Device Model Parameters” IEEE Transactions on Electron Devices,Vol. ED-30, No. 9, pp.1219-1228, September 1983.
• [12] H. Gavin, “The Levenberg-Marquardt method for nonlinear least squares curve-fitting problems”, Department of Civil and Environmental Engineering, Duke University, July 16, 2010.

Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).