Indium-gallium-zinc oxide thin-film preparation via single-step radio frequency sputter deposition using mixed-oxide powder targets

• Autorzy: Satake Takahiko , Kawasaki Hiroharu , Aoqiu Shin-Ichi

Identyfikatory

DOI

10.24425/aee.2023.145425

• Języki publikacji: EN

Abstrakty

EN

Indium gallium zinc oxide (In–Ga–Zn–O) thin films, which are transparent conductive films for liquid crystals and electroluminescent displays, were fabricated via singlestep sputter deposition using one target containing different proportions of indium oxide, gallium oxide, and zinc oxide powders. Experimental results suggest that the In–Ga–Zn–O thin films can be prepared using the method of single-step radio frequency (RF) sputter deposition, applying a powder target containing indium oxide, gallium oxide, and zinc oxide. The In–Ga–Zn–O thin films were prepared on Si substrates, and the deposition rate depended on the target composition. In these plasma processes, electron density and temperature were essentially independent of target composition. The prepared films were very smooth with a root-mean-square roughness of less than 10 nm. The crystallinity of the ZnO peak was observed in all the films; whereas the In and Ga peaks were not observed in the films prepared. The X-ray photoelectron spectroscopy of the films also revealed that the elemental concentration ratio of In–Ga–Zn–O thin films could be prepared using one target, and that can be easily controlled by ratios in the In₂O₃/Ga₂O₃/ZnO composition in the powder target. The transmittances were > 75% at 800 nm for all the target mixtures, and increased with increasing In₂O₃ in the powder target.

Słowa kluczowe

EN

In–Ga–Zn–O thin-film; plasma processes; powder target; sputtering deposition; transparent conductive film

• Wydawca: Polish Academy of Sciences, Committee on Electrical Engineering
• Czasopismo: Archives of Electrical Engineering
• Rocznik: 2023
• Tom: Vol. 72, nr 2
• Strony: 555--563
• Opis fizyczny: Bibliogr. 34 poz., rys.

Twórcy

autor

Satake Takahiko

• Graduate School of Engineering Sojo University Ikeda Nishi-ku Kumamoto City, Japan

• https://orcid.org/0000-0003-1652-7029

autor

Kawasaki Hiroharu

• Department of Electrical and Electronic Engineering, National Institute of Technology, Sasebo College Okishin-machi, Sasebo City, Nagasaki Pref., Japan

autor

Aoqiu Shin-Ichi

• Graduate School of Engineering Sojo University Ikeda Nishi-ku Kumamoto City, Japan

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Uwagi

Opracowanie rekordu ze środków MNiSW, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2024).