Resistive memory physical mechanism in a thin-film Ag/YBa2Cu3O7-x/Ag structure

• Autorzy: Waśkiewicz J. , Gołębiowski J.

Warianty tytułu

PL

Mechanizm fizyczny pamięci rezystancyjnej w cienkowarstwowej strukturze Ag/YBa2Cu3O7-x/Ag

• Języki publikacji: EN

Abstrakty

EN

This paper presents results of experimental research on the electro-resistance memory effect in a thin-film Ag/YBa2Cu3O7-x/Ag structure at temperatures of 78K to 300K. This phenomenon was explained by processes of destruction and recovery the oxygen-depleted layers situated close to electrodes and within the superconductor volume. The processes occur through ion electro-diffusion by numerous oxygen vacancies existing in perovskite-type materials.

PL

W pracy przedstawiono wyniki badań doświadczalnych zjawiska pamięci elektrorezystancyjnej w strukturze cienkowarstwowej Ag/YBa2Cu3O7-x/Ag w temperaturach od 78K do 300K. Zjawisko to wyjaśniono procesami likwidacji i odtwarzania warstw zubożonych w jony tlenu, znajdujących się w sąsiedztwie elektrod oraz w objętości nadprzewodnika. Procesy te zachodzą na drodze elektrodyfuzji jonów poprzez liczne wakansy tlenowe obecne w materiałach typu perowskitu.

Słowa kluczowe

EN

high-temperature superconductor; electro-resistance effect; temperature characteristics; current characteristic

PL

nadprzewodnik wysokotemperaturowy; zjawisko pamięci rezystancyjnej; charakterystyka prądowa; charakterystyka temperaturowa; elektrodyfuzja

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2015
• Tom: R. 91, nr 11
• Strony: 313--317
• Opis fizyczny: Bibliogr. 21 poz., wykr.

Twórcy

autor

Waśkiewicz J.

• Białystok University of Technology, Faculty of Electrical Engineering, ul. Wiejska 45d, 15-351 Białystok

autor

Gołębiowski J.

• Białystok University of Technology, Faculty of Electrical Engineering, ul. Wiejska 45d, 15-351 Białystok

Bibliografia

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