Utlenianie węglika krzemu : charakteryzacja procesu i metody symulacji kinetyki

• Autorzy: Król K. , Sochacki M. , Szmidt J.

Identyfikatory

DOI

10.15199/ELE-2014-086

Warianty tytułu

EN

Oxidation of silicon carbide : process characterization and kinetics modeling

• Języki publikacji: PL

Abstrakty

PL

W artykule przedstawiono porównanie procesu utleniania termicznego krzemu oraz węglika krzemu, kładąc nacisk na metody opisu i modelowania zjawiska wzrostu warstwy SiO₂ otrzymywanej na odpowiednim podłożu. Przedyskutowano możliwości adaptacji modeli kinetyki utleniania opracowanych dla krzemu (model Deala-Grova oraz model oparty o zjawisko emisji międzywęzłowych atomów krzemu z interfejsu) do zastosowań w technologii mikroelektronicznej węglika krzemu, szczególnie pod kątem zastosowań w węgliko-krzemowych tranzystorach mocy. Przedstawiono także wady i zalety każdego podejścia.

EN

Thermal oxidation process of silicon and silicon carbide is compared in this article. Methods of modeling and description of growth kinetic developed for silicon technology and their adaptation to silicon carbide technology are discussed. Classical Deal-Grove model and recently developed silicon interfacial emission model are investigated. Features of both models are shown and discussed.

Słowa kluczowe

PL

węglik krzemu; SiC; procesy termiczne

EN

silicon carbide; SiC; thermal processes

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Elektronika : konstrukcje, technologie, zastosowania
• Rocznik: 2014
• Tom: Vol. 55, nr 7
• Strony: 144--148
• Opis fizyczny: Bibliogr. 44 poz.

Twórcy

autor

Król K.

• Instytut Tele- i Radiotechniczny, Warszawa
• Politechnika Warszawska, Instytut Mikro- i Optoelektroniki

autor

Sochacki M.

• Politechnika Warszawska, Instytut Mikro- i Optoelektroniki

autor

Szmidt J.

• Politechnika Warszawska, Instytut Mikro- i Optoelektroniki

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