An Effect Etching Time on Structure Properties of Nano-Crystalline p-type Silicon

• Autorzy: Hadi H. A.
• Języki publikacji: EN

Abstrakty

EN

This paper reports the influence of the etching time on structural characteristics of porous silicon manufactured by electrochemical etching (ECE) anodization p-type silicon wafers. Micro and nano-structural features of the samples are mainly investigated by XRD and AFM techniques. The morphological properties of PS layer such as nano-crystalline size, the structure aspect of PS layer and lattice constant have been investigated. Nanocrystals size (grain size) computing from XRD data (145 to 85) nm is resulting the increasing etching time.AFM investigations reveal increase in (RMS) roughness, Sz.(Ten Point height) and average diameter of the porous structure with increase in etching time.

Słowa kluczowe

EN

Porous Silicon; Electrochemical Etching; ECE; XRD; AFM

• Wydawca: Przedsiębiorstwo Wydawnictw Naukowych "DARWIN"
• Czasopismo: International Letters of Chemistry, Physics and Astronomy
• Rocznik: 2014
• Tom: Vol. 17, iss. 3
• Strony: 327--333
• Opis fizyczny: Bibliogr. 9 poz.,

Twórcy

autor

Hadi H. A.

• Department of Physics, College of Education, University of Al-Mustansiriyah, Baghdad, Iraq

Bibliografia

• [1] Hasan A. Hadi, International Letters of Chemistry, Physics and Astronomy 17(2) (2014) 142-152.
• [2] Hasan A. Hadi, Raid A. Ismail, Nadir F. Habubi, International Letters of Chemistry, Physics and Astronomy 3 (2013) 29-36.
• [3] Hasan A. Hadi, Intesar H. Hashim, Journal of Electron Devices 20 (2014) 1701-1710.
• [4] M. Jayachandran, M. Paramasivam, K.R. Murali, D.C. Trivedi M. Raghavan, Meter. Phys. Mech. 4 (2001) 143-147.
• [5] J. P. Kar, S. K. Mothanta, G. Bose, S. Tuli, A. Kamra, V. Mathur, Journal of optoelectronic and advanced material 11 (2009) 238-242.
• [6] M. Jayachandran, M. Paramasivam, K. Murali, D. Trivedi, M. Raghavan, Meter. Phys. Mech. 4 (2001) 143-147.
• [7] K. Omar, A. Ramizy, Z. Hassan, Superlattices and Microstructures 50 (2011) 119-127.
• [8] Z. Hens, D. Vanmaekelbergh, E. J. Stoffels, H. Kempen, Phys. Rev. Lett. 88 (2002) 236803.
• [9] V. Parkhutik, Solid-state Electron. 43 (1999) 1121-1141.