Comparison of power losses in hard switched applications using silicon and silicon carbide power semiconductors

• Autorzy: Krupa A. , Tomaszuk A.
• Konferencja: Computer Applications in Electrical Engineering 2012 (23-24.04.2012; Poznań, Polska)
• Języki publikacji: EN

Abstrakty

EN

This paper presents broad comparison of power losses in silicon (Si) and silicon carbide (SiC) semiconductor technologies. Switching devices - diodes and transistors were thoroughly tested in a number of configurations over a wide frequency and duty cycle ranges in hard switched buck converter topology. Four different transistors i.e. MOSFET (Si), MOSFET (SiC), IGBT(Si) and JFET(SiC) were examined, each of them worked with either Si or SiC freewheeling diode. To ensure steady power loss measurement conditions the tests were carried out in the same measurement system in settled conditions. Simulation analysis resemble the laboratory measurement results as well as theoretical assumptions. The paper presents the simulation to laboratory tests comparison of chosen transistor - diode configurations.

Słowa kluczowe

EN

semiconductor technologies; semiconductor; Si technology; SiC technology

• Wydawca: Wydawnictwo Politechniki Poznańskiej
• Czasopismo: Poznan University of Technology Academic Journals. Electrical Engineering
• Rocznik: 2012
• Tom: No. 71
• Strony: 225--232
• Opis fizyczny: Bibliogr. 9 poz., rys.

Twórcy

autor

Krupa A.

• Białystok University of Technology

autor

Tomaszuk A.

• Białystok University of Technology

Bibliografia

• [1] Carr J. A., Hotz D., Baida J. C., Mantooth H. A., Ong A., Agarwal A., “Assessing the Impact of SiC MOSFETs on ConverterInterfaces for Distributed Energy Resources” IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 24, NO. 1, JANUARY (2009).
• [2] Pyo S., Sheng K., „Junction Temperature Dynamics of Power MOSFET and SiC Diode” 6th International Power Electronics and Motion Control Conference IPEMC (2009).
• [3] Evseev Yu. A. and Surma A. M. “From Silicon to Silicon Carbide” Elektrotekhnika, No. 5, pp. 15-18. (2007).
• [4] D. Graovac, M. Pürschel „IGBT Power Losses Calculation Using the Data-Sheet Parameters” Application Note, V 1. 1 , January (2009).
• [5] Ong A., Carr J., Baida J., Mantooth A., “A Comparison of Silicon and Silicon Carbide MOSFET Switching Characteristics” IEEE Region 5 Technical Conference, (2007).
• [6] Galigekere V. P., Kazimierczuk M. K., “Effect of SiC Schottky and Si junction diode reverse recovery on boost converter” (2007).
• [7] Jeannin P.-O., Frey D., Podvin J.-C., Ferrieux J.-P., Barbaroux J., “1 MHz Power Factor Correction Boost Converter with SiC Schottky Diode” (2004).
• [8] Franke W.-T., Fuchs F. W. “Comparison of Switching and Conducting Performance of SiC-JFET and SiC-BJT with a State of the Art IGBT” European Conference on Power Electronics and Applications(EPE) IEEE (2009).
• [9] Li Q., Wolfs P., “A Review of the Single Phase Photovoltaic Module Integrated Converter Topologies with Three Different DCLink Configurations”, Transactions on Power Electronics IEEE 1320-1333 (2008).