Defect-minimized directly grown graphene-based solar cells

• Autorzy: Cui Yiqian , Wei Jiaqi , Jia Lizhe , Zhang Lukai , Zhou Qing , Liu Yanliang , Zhang Yong , Zhang Yu , Yu Wei

Identyfikatory

DOI

10.2478/msp-2022-0037

• Języki publikacji: EN

Abstrakty

EN

Using plasma-enhanced chemical vapor deposition (PECVD) to directly grow graphene nanowalls (GNWs) on silicon to preparate the solar cells is compatible with current industrial production. However, many defects in the GNWs hinder improvement of the power conversion efficiency (PCE) of solar cells. In this work, we found that the defects in GNWs can be reduced under the condition of keeping the appropriate sheet resistance of GNWs by simultaneously reducing the growth temperature and increasing the growth time. Then, a PCE of 3.83% was achieved by minimizing the defects in the GNWs under the condition of ensuring adequate coverage of GNWs on bare planar silicon. The defects in GNWs were further reduced by adding a poly(3,4-ethylenedioxythiophene) (PEDOT):Nafion passivation coating, and the PCE was significantly improved to10.55%. Our work provides an innovative path and a simple approach to minimize the defects in graphene grown directly on silicon for high-efficiency solar cells.

Słowa kluczowe

EN

graphene; PECVD; solar cell; defect

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2022
• Tom: Vol. 40, No. 3
• Strony: 125--134
• Opis fizyczny: Bibliogr. 29 poz., rys., tab.

Twórcy

autor

Cui Yiqian

• Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of NewEnergy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, China

autor

Wei Jiaqi

• Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of NewEnergy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, China

autor

Jia Lizhe

• Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of NewEnergy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, China

autor

Zhang Lukai

• Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of NewEnergy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, China

autor

Zhou Qing

• Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of NewEnergy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, China

autor

Liu Yanliang

• Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of NewEnergy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, China

autor

Zhang Yong

• Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of NewEnergy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, China

autor

Zhang Yu

• Hebei Key Laboratory of Digital Medical Engineering, College of Electronic Information Engineering, Hebei University,Baoding 071002, China

autor

Yu Wei

• Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of NewEnergy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, China

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Uwagi

Opracowanie rekordu ze środków MEiN, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2022-2023).