Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors

• Autorzy: Pucicki D.

Identyfikatory

DOI

10.1515/msp-2017-0110

• Języki publikacji: EN

Abstrakty

EN

A theoretical study of electronic structures and optical properties of GaInNAs/GaAs quantum wells has been performed. The inhomogeneous distributions of indium and nitrogen atoms along the growth direction were discussed as the main factors having significant impact on the QWs absorption efficiency. The study was performed by applying the band anticrossing model combined with the envelope function formalism and based on the material parameters which can be found in the literature. Indeed, the electronic band structure of 15 nm thick uniform Ga_0.7In_0.3N_0.02As_0.98/GaAs QW was computed together with electronic structures of several types of inhomogeneous QWs, with the same total content of In and N atoms. It was found that presented inhomogeneities lead to significant quantum wells potential modifications and thus to spatial separation of the electrons and holes wave functions. On the other hand, these changes have a significant impact on the absorption coefficient behavior. This influence has been studied on the basis of simulated photoreflectance spectra, which probe the absorption transitions between QW energy subbands. The electronic structure of inhomogeneous QWs under the influence of electric field has also been studied. Two different senses of electric field vector (of p-i-n and n-i-p junctions) have been considered and thus, the improvement of such types of QWs-photodetectors based on inhomogeneous GaInNAs QWs has been proposed.

Słowa kluczowe

EN

dilute nitrides; quantum well; structural inhomogeneities; photodetectors

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2017
• Tom: Vol. 35, No. 4
• Strony: 893--902
• Opis fizyczny: Bibliogr. 30 poz., rys., tab.

Twórcy

autor

Pucicki D.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technolgy, Janiszewskiego 11/17, 50-372 Wroclaw, Poland

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Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).