InP:Fe Nanodiode conductivity current persistent photoenhamcement decey

• Autorzy: Zardas G. E. , Anagnostakis E. A.
• Języki publikacji: EN

Abstrakty

EN

The temporal decay of the persistent photoenhancement of the conductivity current flowing through the active channel of two samples of a typical nanodevice comprising a low resistivity n-type InP:Fe epitaxial layer and a semi-insulating InP:Fe substrate is experimentally investigated at room temperature and interpreted via consideration of the functionality of the diodic interface potential barrier. A mean decay mechanism and its distinct regimes are singled out.

Słowa kluczowe

EN

photonic nanodevices; persistent photoconductivity

• Wydawca: Politechnika Gdańska
• Czasopismo: TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk
• Rocznik: 2013
• Tom: Vol. 17, No 3-4
• Strony: 139--143
• Opis fizyczny: Bibliogr. 4 poz., rys.

Twórcy

autor

Zardas G. E.

• Department of Physics, University of Athens, 157 84 Zographos, Greece

autor

Anagnostakis E. A.

• Hellenic Physical Society, 174 55 Alimos, Greece

Bibliografia

• [1] Zardas G E, Yannakopoulos P H, Symeonides Ch I, Csabay O and Euthymiou P C 2005 Materials Science – Poland 23 985
• [2] Theodorou D E and Queisser H J 1980 Applied Physics 23 121
• [3] Zardas G E, Aidinis C J, Anagnostakis E A and Symeoinides Ch I 2011 Open Journal of Microphysics 1 32
• [4] Singh J 1995 Semiconductor Optoelectronics, Mc Graw-Hill, Series in Electrical and Computer Engineering, Singapore, Chapter 6