Development of sol-gel derived gahnite anti-reflection coating for augmenting the power conversion efficiency of polycrystalline silicon solar cells

• Autorzy: Kaliyannan Gobinath Velu , Palanisamy Senthil Velmurugan , Palanisamy Manivasakan , Subramanian Mohankumar , Paramasivam Prabhakaran , Rathanasamy Rajasekar

Identyfikatory

DOI

10.2478/msp-2019-0066

• Języki publikacji: EN

Abstrakty

EN

The present research is focused on developing ZnAl₂O₄ (gahnite) spinel as an antireflection coating material for enhanced energy conversion of polycrystalline silicon solar cells (PSSC). ZnAl₂O₄ has been synthesized using dual precursors, namely aluminum nitrate nonahydrate and zinc nitrate hexahydrate in ethanol media. Diethanolamine has been used as a sol stabilizer in sol-gel process for ZnAl₂O₄ nanosheet fabrication. nanosheet was deposited layer-by-layer (LBL) on PSSC by spin coating method. The effect of ZnAl₂O₄ coating on the physical, electrical, optical properties and temperature distribution in PSSC was investigated. The synthesized antireflection coating (ARC) material bears gahnite (ZnAl₂O₄) spinel crystal structure composed of two dimensional (2D) nanosheets. An increase in layer thickness proves the LBL deposition of ARC on the PSSC substrate. The ZnAl₂O₄ 2D nanosheet comprising ARC on the PSSC was tested and it exhibited a maximum of 93 % transmittance, short-circuit photocurrent of 42.364 mA/cm² and maximum power conversion efficiency (PCE) 23.42 % at a low cell temperature (50.2 °C) for three-layer ARC, while the reference cell exhibited 33.518 mA/cm², 15.74 % and 59.1 °C, respectively. Based on the results, ZnAl₂O₄ 2D nanosheets have been proven as an appropriate ARC material for increasing the PCE of PSSC.

Słowa kluczowe

EN

polycrystalline silicon solar cells; sol-gel; spin coating; anti-reflection coating; gahnite; power conversion efficiency

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2019
• Tom: Vol. 37, No. 3
• Strony: 465--472
• Opis fizyczny: Bibliogr. 32 poz., tab., rys.

Twórcy

autor

Kaliyannan Gobinath Velu

• Kongu Engineering College, Perundurai, Tamil Nadu, 638060, India

autor

Palanisamy Senthil Velmurugan

• Kongu Engineering College, Perundurai, Tamil Nadu, 638060, India

autor

Palanisamy Manivasakan

• Bharathiar University Arts and Science College, Modakurichi, Tamil Nadu, 638104, India

autor

Subramanian Mohankumar

• Kongunadu College of Engineering and Technology, Trichy, Tamil Nadu, 621215, India

autor

Paramasivam Prabhakaran

• Kongu Engineering College, Perundurai, Tamil Nadu, 638060, India

autor

Rathanasamy Rajasekar

• Kongu Engineering College, Perundurai, Tamil Nadu, 638060, India

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