Growth of intermetallic compound between indium-based thermal interface material and copper substrate: molecular dynamics simulations

• Autorzy: Fałat T. , Płatek B.

Identyfikatory

DOI

10.1515/msp-2015-0054

• Języki publikacji: EN

Abstrakty

EN

The diffusion phenomenon occurring between copper and indium was investigated by molecular dynamics simulations. The calculations were carried out in various temperatures in aging domain with the use of the commercially available Materials Studio v.6. software. The results showed that the intermetallic compound (IMC) growth followed the parabolic law, which indicated this growth to be mainly controlled by volume diffusion. The growth activation energy was estimated at 7.48 kJ.mol(-1).

Słowa kluczowe

EN

thermal interface material; TIM; molecular dynamics simulations; MD; diffusivity; intermetallic compound; IMC

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2015
• Tom: Vol. 33, No. 2
• Strony: 445--450
• Opis fizyczny: Bibliogr. 10 poz., rys.

Twórcy

autor

Fałat T.

• Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, 11/17 Janiszewskiego St., 50-372 Wroclaw, Poland

autor

Płatek B.

• Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, 11/17 Janiszewskiego St., 50-372 Wroclaw, Poland

Bibliografia

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