InP nanowires quality control using SEM and Raman spectroscopy

• Autorzy: Grodecki K. , Dumiszewska E. , Romaniec M. , Strupinski W.

Identyfikatory

DOI

10.1515/msp-2016-0116

• Języki publikacji: EN

Abstrakty

EN

Three different types of samples of InP nanowires, i.e. undoped, doped with Si and doped with Te, were grown and measured using SEM and Raman spectroscopy. Scanning Electron Microscope (SEM) images showed differences in the length, homogeneity and curvature of the nanowires. The most homogenous wires, grown most perpendicular to the surface, were those Si doped. They were also the shortest. Raman spectroscopy showed that the nanowires doped with Si had the lowest Full Width at Half Maximum (FWHM) TO band, which suggests the highest crystal quality of these wires. For the wires doped with Te, which were the most inhomogeneous, a low energy acoustic band was also observed, which suggests the lowest crystal quality of these structures.

Słowa kluczowe

EN

Raman spectroscopy; nanowires; epitaxy; InP

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 4
• Strony: 851--855
• Opis fizyczny: Bibliogr. 29 poz., rys.

Twórcy

autor

Grodecki K.

• Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

autor

Dumiszewska E.

• Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland

autor

Romaniec M.

• Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland

autor

Strupinski W.

• Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland

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Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).