PL EN


Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
Tytuł artykułu

Effect of electron beam injection on boron redistribution in silicon and oxide layer

Autorzy
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The behavior of boron redistribution in silicon with and without oxide layer after electron beam injection (EBI) was investigated. Special defect shapes were generated on the surface of bare and oxidized silicon wafers. Secondary ion mass spectrometer was used to measure the boron profile. The results showed that after long EBI time, boron tended to be induced from both sides of the transition region between the oxide layer and silicon. For the sample without oxide layer after EBI, boron tended to diffuse towards the surface and its concentration obviously reduced inside the silicon. The results of the study show the potential use of the process in removing boron impurity in silicon.
Wydawca
Rocznik
Strony
14--17
Opis fizyczny
Bibliogr. 18 poz., rys.
Twórcy
autor
  • School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China
  • Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China
autor
  • School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China
  • Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China
autor
  • School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China
  • Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China
autor
  • School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China
  • Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China
autor
  • School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China
  • Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China
autor
  • School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China
  • Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China
Bibliografia
  • [1] DELANNOY Y., J. Cryst. Growth, 360 (2012), 61.
  • [2] MARTORANO M.A., FERREIRA NETO J.B., OLIVEIRA T.S., TSUBAKI T.O., Mater. Sci. Eng. B-Adv., 176 (2011), 217.
  • [3] JIANG D.C., TAN Y., SHI S., DONG W., GU Z., ZOU R.X., Mater. Lett., 78 (2012), 4.
  • [4] KEMMOTSU T., NAGAI T., MAEDA M., High Temp. Mat. Pr.-Isr., 30 (2011), 17.
  • [5] WU J.J., LI Y.L., MA W.H., LIU K., WEI K.X., XIE K.Q., YANG B., DAI Y.N., Silicon-Neth., 6 (2014), 79.
  • [6] NAKAMURA N., BABA H., SAKAGUCHI Y., J. Jpn. I. Met., 67 (2003), 583.
  • [7] ZHANG L., TAN Y., XU F.M., LI J.Y., WANG H.Y., GU Z., Sep. Sci. Technol., 48 (7) (2013), 1140.
  • [8] YOSHIKAWA T., MORITA K., Metall. Mater. Trans. B, 36 (2005), 731.
  • [9] ABADLI S., MANSOUR F., BEDEL PEREIRA E., Cryst. Res. Technol., 47 (10) (2012), 1047.
  • [10] AOYAMA T., SUZUKI K., TODA Y., YAMAZAKI T., TAKASHI K., ITO T., J. Appl. Phys., 77 (1995), 417.
  • [11] GROVE A.S., LEISTIKO O., SAH C.T., J. Appl. Phys., 35 (1964), 2695.
  • [12] FAIR R.B., J. Electrochem. Soc., 144 (1997), 709.
  • [13] LI W.Q., ZHANG H.B., Acta Phys. Sin.-Ch. Ed., 57 (2008), 3219.
  • [14] TAN Y., QIN S.Q., WEN S.T., LI J.Y., SHI S., JIANG D.C., PANG D.Y., Mat. Sci. Semicon. Proc., 18 (2014), 42.
  • [15] SUZUKI K., MIYASHITA T., IEEE T. Electron Dev., 47 (2000), 524.
  • [16] OHSAWA A., HONDA K., TOYOKURA N., J. Electrochem. Soc., 131 (1984), 2968.
  • [17] WOLF H.F., Silicon Semiconductor Data, Pergamon, London, 1969.
  • [18] BAIERLE R.J., CALDAS M.J., DABROWSKI J., MUSSIG H.J., ZAVODINSKY V., Physica B, 273 (1999), 260.
Uwagi
Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-730e5c0c-6ab1-4410-be34-15afa263eb82
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.