The optical parameters of TiO2 antireflection coating prepared by atomic layer deposition method for photovoltaic application

• Autorzy: Szindler Marek , Szindler Magdalena M.

Identyfikatory

DOI

10.37190/oa200412

• Języki publikacji: EN

Abstrakty

EN

Titanium dioxide thin films have been deposited on silicon wafers substrates by an atomic layer deposition (ALD) method. There optical parameters were investigated by spectroscopic ellipsometry and UV/VIS spectroscopy. A material with a refractive index of 2.41 was obtained. Additionally, in a wide spectral range it was possible to reduce the reflection from the silicon surface below 5%. The Raman spectroscopy method was used for structural characterization of anatase TiO₂ thin films. Their uniformity and chemical composition are confirmed by a scanning electron microscope (SEM) energy dispersive spectrometer (EDS).

Słowa kluczowe

EN

thin film; atomic layer deposition; titanium dioxide

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2020
• Tom: Vol. 50, nr 4
• Strony: 663--670
• Opis fizyczny: Bibliogr. 16 poz., rys., tab.

Twórcy

autor

Szindler Marek

• Department of Engineering Materials and Biomaterials, Faculty of Mechanical Engineering, Silesian University of Technology, 18A Konarskiego St, 44-100 Gliwice, Poland

autor

Szindler Magdalena M.

• Department of Engineering Materials and Biomaterials, Faculty of Mechanical Engineering, Silesian University of Technology, 18A Konarskiego St, 44-100 Gliwice, Poland

Bibliografia

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Uwagi

Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2021).