Analysis of surface properties of Ti-Cu-Ox gradient thin films using AFM and XPS investigations

• Autorzy: Kotwica T. , Domaradzki J. , Wojcieszak D. , Sikora A. , Kot M. , Schmeisser D.

Identyfikatory

DOI

10.2478/msp-2018-0100

• Języki publikacji: EN

Abstrakty

EN

The paper presents results of investigations on surface properties of transparent semiconducting thin films based on (Ti-Cu)oxide system prepared using multi-magnetron sputtering system. The thin films were prepared using two programmed profiles of pulse width modulation coefficient, so called V- and U-shape profiles. The applied powering profiles allowed fabrication of thin films with gradient distribution of Ti and Cu elements over the thickness of deposited layers. Optical investigations allowed determination of transparency of prepared films that reached up to 60 % in the visible part of optical radiation, which makes them attractive for the transparent electronics domain. Surface properties investigations showed that the surface of mixed (Ti-Cu)oxides was sensitive to adsorption, in particular to carbon dioxide and water vapor. Soft etching with argon ions resulted in surface cleaning from residuals, however, deoxidation of Cu-oxide components was also observed.

Słowa kluczowe

EN

surface; gradient distribution; thin film oxide

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2018
• Tom: Vol. 36, No. 4
• Strony: 761--768
• Opis fizyczny: Bibliogr. 14 poz., rys., tab.

Twórcy

autor

Kotwica T.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, Wroclaw, 50-372, Poland

autor

Domaradzki J.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, Wroclaw, 50-372, Poland

autor

Wojcieszak D.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, Wroclaw, 50-372, Poland

autor

Sikora A.

• Department of Material Science and Diagnostics, Electrotechnical Institute, M. Sklodowskiej-Curie 55/61, Wroclaw, 50-369, Poland

autor

Kot M.

• Applied Physics-Sensor Technology, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Wachsmann-Allee 17, 03046, Cottbus, Germany

autor

Schmeisser D.

• Applied Physics-Sensor Technology, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Wachsmann-Allee 17, 03046, Cottbus, Germany

Bibliografia

• [1] Bhavar V., Kattire P., Thakare S., Patil S., Singh R.K.P., Mater. Sci. Eng. B-Adv., 229 (2017) 012021.
• [2] Udupa G., Shrikantha Rao S., Gangadharan K.V., Procedia Mat. Sci., 5 (2014), 1291.
• [3] Chmielewski M., Pietrzak K., B. Pol. Acad. Sci.-Tech., 64(1) (2016), 151.
• [4] Sohn H., Kim S., Shin W., Lee J.M., Lee H., Yun D.-J., Moon K.-S., Han I.T., Kwak C., Hwang S.-J., ACS Appl. Mater. Inter., 10(3) (2018), 2688.
• [5] Safeen K., Micheli V., Bartali R., Gottardi G., Safeen A., Ullah H., Laidani N., Thin Solid Films, 645 (2018), 173.
• [6] Domaradzki J., Prociow E., Kaczmarek D., Wojcieszak D., Gatner D., Lapinski M., Acta Phys. Pol. A, 116 (2009), 126.
• [7] Schmidt H., Naumann M., Muller T.S., Akarsu M., Thin Solid Films, 502 (2006), 132.
• [8] Domaradzki J., Kotwica T., Mazur M., Kaczmarek D., Wojcieszak D., Semicond. Sci. Tech., 33 (2018), 015002.
• [9] Domaradzki J., Surf. Coat. Tech., 290 (2016), 28.
• [10] Domaradzki J., Kaczmarek D., Adamiak B., Dora J., Maguda S., Pol., 221077 (2011).
• [11] Mazur M., Domaradzki J., Wojcieszak D., Kaczmarek D., Surf. Coat. Tech., 334 (2018), 150.
• [12] Yuan Q., Chen L., Xiong M., He J., Luo S.-L., Au C.-T., Yin S.-F., Chem. Eng. J., 255 (2014), 394.
• [13] Wojcieszak D., Kaczmarek D., Antosiak A., Mazur M., Rybak Z., Rusak A., Osekowska M., Poniedzialek A., Gamian A., Szponar B., Mat. Sci. and Eng. C, 56 (2015), 48.
• [14] Xu X., Gao Z., Cui Z., Liang Y., Li Z., Zhu S., Yang X., Ma J., ACS Appl. Mater. Interfaces, 8(1) (2016), 91.

Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).