Modeling of photoconverter parameters basedon CdS/porous-CdTe/CdTe heterostructure

• Autorzy: Dyadenchuk Alena F. , Oleksenko Roman I.

Identyfikatory

DOI

10.35784/iapgos.6862

Warianty tytułu

PL

Modelowanie parametrów fotoprzetwornika opartegona heterostrukturze CdS/porowaty-CdTe/CdTe

• Języki publikacji: EN

Abstrakty

EN

This article presents a comprehensive study of the fabrication and modeling of a CdS/porous-CdTe/CdTe heterostructure aimed atimproving solar cell efficiency. The research focuses on two critical processes: the electrochemical etching for producing porous-CdTe substrates and the chemical surface deposition method for applying CdS films. The structural and optical characteristicsof the fabricated heterostructure were analyzed using SEM and EDAX methods, confirming the formation of a continuous CdS layer over a porous-CdTe layer. The thickness of the porous-CdTe and CdS layerswas 1.0 and 2.0μm, respectively. The obtained thick values of the manufactured structure were used to model the CdS/porous-CdTe/CdTe heterostructure in the PC1D-program in order to find the optimal solar cell parameters. The photoconverter current-voltage curve was obtained from the PC1D-program. The theoretically calculated efficiency was 21.6%. The study further explored the impact of varying the thickness of the CdS window layer and the porous-CdTe buffer layer on photoconverter performance. The efficiency of the CdS/porous-CdTe/CdTe photoconverter reaches maximum values at a thicknessof 2.3-2.4 μmand 1.9 μmfor CdS and porous-CdTe layers, respectively. Additionally, the buffer layer's porosity enhanced light absorption, contributingto higher carrier generation rates. In order to increase the CdS/porous-CdTe/CdTe photoconverter efficiency, the single-layer and double-layer antireflective coatingsused, which are most often in the CdS/CdTe solar cells production, was investigated.To further optimize the photoconverter, anti-reflective coatings were investigated using the matrix method. The results showed that the best reflectance is observed for the ITO/ZnO double anti-reflective coating. The solar cell efficiency with this coating was 22.8% at 50/30 nm thicknesses. Additional research in the modifying the porosityof the substrates and its effect on the photoconverter characteristics may lead to the discovery of new opportunities increasing their efficiency and stability.The findings underscore the potential of CdS/porous-CdTe/CdTe heterostructures as efficient photovoltaic devices.

PL

W artykule przedstawiono kompleksowe badanie wytwarzania i modelowania heterostruktury CdS/porowate-CdTe/CdTew celu poprawy wydajności ogniw słonecznych. Badania koncentrują się na dwóch krytycznych procesach: trawieniu elektrochemicznym w celu wytworzenia porowatych podłoży CdTe oraz chemicznej metodzie osadzania powierzchniowego w celu nałożenia warstw CdS. Właściwości strukturalne i optyczne wytworzonej heterostruktury zostały przeanalizowane przy użyciu metod SEM i EDAX, potwierdzając tworzenie ciągłej warstwy CdS na porowatej warstwie CdTe. Grubość porowatych warstw CdTe i CdS wynosiła odpowiednio 1,0 i 2,0 μm. Uzyskane wartości grubości wytworzonej struktury zostały wykorzystanedo modelowania heterostruktury CdS/porowate-CdTe/CdTe w programie PC1D w celu znalezienia optymalnych parametrów ogniwa słonecznego. Charakterystyka prądowo-napięciowa fotokprzetwornika została uzyskana z programu PC1D. Teoretycznie obliczona sprawność wyniosła 21,6%.W badaniu zbadano również wpływ zmiany grubości warstwy okiennej CdS i porowatej warstwy buforowej CdTe na wydajność fotoprzetwornika. Wydajność fotoprzetwornika CdS/porowate-CdTe/CdTe osiąga maksymalne wartości przy grubości 2,3-2,4 μm i 1,9 μm odpowiednio dla warstw CdSi porowate-CdTe. Dodatkowo, porowatość warstwy buforowej zwiększyła absorpcję światła, przyczyniając się do wyższych szybkości generowania nośników. W celu zwiększenia wydajności fotoprzetwornika CdS/porowate-CdTe/CdTe zbadano stosowane jedno-i dwuwarstwowe powłoki antyrefleksyjne, które są najczęściej stosowane w produkcji ogniw słonecznych CdS/CdTe. W celu dalszej optymalizacji fotoprzetwornika zbadanopowłoki antyrefleksyjne przy użyciu metody matrycowej. Wyniki pokazały, że najlepszy współczynnik odbicia obserwuje się dla podwójnejpowłoki antyrefleksyjnej ITO/ZnO. Sprawność ogniwa słonecznego z tą powłoką wyniosła 22,8% przy grubości 50/30 nm. Dodatkowe badania w zakresie modyfikacji porowatości podłoży i jej wpływu na charakterystykę fotoprzetworników mogą doprowadzić do odkrycia nowych możliwości zwiększających ich wydajność i stabilność. Wyniki badań podkreślają potencjał heterostruktur CdS/porowate-CdTe/CdTe jako wydajnych urządzeń fotowoltaicznych.

Słowa kluczowe

EN

electrochemical etching; chemical surface deposition; anti-reflective coating; modelling

PL

trawienie elektrochemiczne; chemiczne osadzanie powierzchniowe; powłoka antyrefleksyjna; modelowanie

• Wydawca: Wydawnictwo Politechniki Lubelskiej
• Czasopismo: Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska
• Rocznik: 2025
• Tom: T. 15, nr 2
• Strony: 65--69
• Opis fizyczny: Bibliogr. 42 poz., tab., wykr.

Twórcy

autor

Dyadenchuk Alena F.

• Dmytro Motornyi Tavria State Agrotechnological University, Department of Higher Mathematics and Physics, Melitopol, Ukraine

• https://orcid.org/0000-0002-6625-9985

autor

Oleksenko Roman I.

• Volodymyr VynnychenkoCentral Ukrainian State University, Department of Philosophy, Political Science and Psychology, Kropyvnytskyi, Ukraine

• https://orcid.org/0000-0002-2171-514X+

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