AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation

• Autorzy: Dyakonova N. , But D. B. , Coquillat D. , Knap W. , Drexler C. , Olbrich P. , Karch J. , Schafberger M. , Ganichev S. D. , Ducournau G. , Gaquiere C. , Poisson M. A. , Delage S. , Cywinski G. , Skierbiszewski C.

Identyfikatory

DOI

10.1515/oere-2015-0026

• Języki publikacji: EN

Abstrakty

EN

We report on the photoresponse dependence on the terahertz radiation intensity in AlGaN/GaN HEMTs. We show that the AlGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm². The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.

Słowa kluczowe

EN

terahertz; photoresponse; HEMT; AlGaN/GaN

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2015
• Tom: Vol. 23, No. 3
• Strony: 195--199
• Opis fizyczny: Bibliogr. 15 poz., wykr.

Twórcy

autor

Dyakonova N.

• Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Univ., Montpellier 2, pl. Eugene Bataillon, 34095, Montpellier, France

autor

But D. B.

• Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Univ., Montpellier 2, pl. Eugene Bataillon, 34095, Montpellier, France

autor

Coquillat D.

• Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Univ., Montpellier 2, pl. Eugene Bataillon, 34095, Montpellier, France

autor

Knap W.

• Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Univ., Montpellier 2, pl. Eugene Bataillon, 34095, Montpellier, France

autor

Drexler C.

• Terahertz Centre, University of Regensburg, Universitätsstr. 31, D-93053 Regensburg, Germany

autor

Olbrich P.

• Terahertz Centre, University of Regensburg, Universitätsstr. 31, D-93053 Regensburg, Germany

autor

Karch J.

• Terahertz Centre, University of Regensburg, Universitätsstr. 31, D-93053 Regensburg, Germany

autor

Schafberger M.

• Terahertz Centre, University of Regensburg, Universitätsstr. 31, D-93053 Regensburg, Germany

autor

Ganichev S. D.

• Terahertz Centre, University of Regensburg, Universitätsstr. 31, D-93053 Regensburg, Germany

autor

Ducournau G.

• Institut d’Electronique et de Microélectronique du Nord, UMR CNRS 8520, Cité Scientifique, Avenue Poincaré, CS 60069, 59652 Villeneuve d’Ascq, France

autor

Gaquiere C.

• Institut d’Electronique et de Microélectronique du Nord, UMR CNRS 8520, Cité Scientifique, Avenue Poincaré, CS 60069, 59652 Villeneuve d’Ascq, France

autor

Poisson M. A.

• Thalés, Thales Research and Technology, Domaine de Corbeville, 91404 Orsay, France

autor

Delage S.

• Thalés, Thales Research and Technology, Domaine de Corbeville, 91404 Orsay, France

autor

Cywinski G.

• Institut of High Pressure Physics, PAS, Unipress, ul. Sokolowska 29/37, 01-142 Warsaw, Poland

autor

Skierbiszewski C.

• Institut of High Pressure Physics, PAS, Unipress, ul. Sokolowska 29/37, 01-142 Warsaw, Poland

Bibliografia

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