Electroluminescence of InGaN/GaN heterostructures at the reverse bias and nitrogen temperature

• Autorzy: Veleschuk V , Vlasenko A , Kisselyuk M , Vlasenko Z , Khmil D , Borshch V

Identyfikatory

DOI

10.5277/oa150409

• Języki publikacji: EN

Abstrakty

EN

The electroluminescence spectra at reverse biases in LED InGaN/GaN heterostructures at liquid nitrogen temperatures were studied. At the reverse bias and T = 77 K, avalanche microplasmas breakdowns were observed. Electroluminescence spectra demonstrate two peaks caused by the recombination of carriers in different parts of the structure (quantum well and p-GaN layer). The temperature narrowing the half-width and the shift of electroluminescence spectra peaks inherent to microplasmas were observed.

Słowa kluczowe

EN

electroluminescence at reverse bias; InGaN/GaN heterostructures; defect

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2015
• Tom: Vol. 45, nr 4
• Strony: 535--543
• Opis fizyczny: Bibliogr. 21 poz., rys.

Twórcy

autor

Veleschuk V

• V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Ave, 03680 Kyiv, Ukraine

autor

Vlasenko A

• V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Ave, 03680 Kyiv, Ukraine

autor

Kisselyuk M

• V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Ave, 03680 Kyiv, Ukraine

autor

Vlasenko Z

• V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Ave, 03680 Kyiv, Ukraine

autor

Khmil D

• V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Ave, 03680 Kyiv, Ukraine

autor

Borshch V

• Poltava National Technical Yuri Kondratyuk University, 24 Pershotravnevyi Ave, 36011 Poltava, Ukraine

Bibliografia

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