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Dielectric functions and optical parameters of heavily doped and/or highly excited Si:P

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Wybrane pełne teksty z tego czasopisma
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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Recently shown photonic and optoelectronic potentialities of Si-based materials and devices require an accurate representation for their optical functions. A predictive model of dielectric function for heavily doped and/or highly excited Si:P is presented. The influence of dopants and of free-carrier population has been calculated independently, allowing the determination of accuracy in usual approximations. The effect of Drude parameters on the heavily doped Si:P optical response is taken into account. All results are supported by experimental data.
Czasopismo
Rocznik
Strony
713--724
Opis fizyczny
Bibliogr. 74 poz., rys., wykr.
Twórcy
autor
  • Photonic Systems Laboratory, Pôle API Parc d’Innovation, Boulevard Sébastien Brant, BP 10413, 67400 Illkirch, France
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
autor
  • Photonic Systems Laboratory, Pôle API Parc d’Innovation, Boulevard Sébastien Brant, BP 10413, 67400 Illkirch, France
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-6d656b10-0377-4679-bbd7-a5d9bd8036c5
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