Minority carrier recombination lifetimes in n-type CdMgSe mixed crystals measured by means of the photothermal infrared radiometry

• Autorzy: Pawlak M. , Maliński M.

Identyfikatory

DOI

10.2478/s11772-014-0175-1

• Języki publikacji: EN

Abstrakty

EN

Minority recombination lifetimes of n-type CdMgSe mixed crystals were estimated by using infrared photothermal radiometry (PTR) amplitude and phase frequency spectra. The results obtained by the PTR method indicate that the lifetimes of optically generated carriers in CdSe and CdxMg₁₋xSe crystals are about 0.1 μs. The diffusion length of minority carrier in n-type CdSe single crystal was found to be 4.42 μm and it is in a good agreement with the literature value. It was found that with the increasing thermal-to-plasma component coefficient A the carrier concentration increases as expected from PTR theory.

Słowa kluczowe

EN

CdMgSe mixed crystals; minority carrier diffusion length; minority recombination lifetime; photothermal radiometry

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2014
• Tom: Vol. 22, No. 1
• Strony: 31--35
• Opis fizyczny: Bibliogr. 23 poz., wykr.

Twórcy

autor

Pawlak M.

• Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolas Copernicus University, 5/7 Grudziądzka St., 87–100 Toruń, Poland

autor

Maliński M.

• Department of Electronics and Computer Science, Koszalin University of Technology, 2 Śniadeckich St., 75–453 Koszalin, Poland

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