The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE

• Autorzy: Łozińska Adriana , Badura Mikołaj , Bielak Katarzyna , Ściana Beata , Tłaczała Marek

Identyfikatory

DOI

10.37190/oa200208

• Języki publikacji: EN

Abstrakty

EN

In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In_0.53Ga_0.47As/Al_0.48In_0.52As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures.The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.

Słowa kluczowe

EN

photoluminescence; quantum cascade laser; MOVPE; metalorganic vapour phase epitaxy

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2020
• Tom: Vol. 50, nr 2
• Strony: 251--256
• Opis fizyczny: Bibliogr. 9 poz., rys., tab.

Twórcy

autor

Łozińska Adriana

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Badura Mikołaj

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Bielak Katarzyna

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Ściana Beata

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Tłaczała Marek

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

• [1] KASAP S., CAPPER P., Springer Handbook of Electronic and Photonic Materials, 2nd Ed., Springer International Publishing AG, 2017, pp. 1037–1055.
• [2] BUGAJSKI M., GUTOWSKI P., KARBOWNIK P., KOLEK A., HAŁDAŚ G., PIERŚCIŃSKI K., PIERŚCIŃSKA D., KUBACKA-TRACZYK J., SANKOWSKA I., TRAJNEROWICZ A., KOSIEL K., SZERLING A., GRZONKA J., KURZYDŁOWSKI K., SLIGHT T., MEREDITH W., Mid-IR quantum cascade lasers: device technology and non-equilibrium Green’s function modelling of electro-optical characteristics, Physica Status Solidi (B) 251(6), 2014, pp. 1144–1157, DOI:10.1002/pssb.201350322.
• [3] FAIST J., CAPASSO F., SIVCO D.L., HUTCHINSON A.L., CHU S.G., CHO A.Y., Short wavelength (λ ~ 3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs, Applied Physics Letters 72(6), 1998, pp. 680–684, DOI:10.1063/1.120843.
• [4] HUANG Y., RYOU J.H., DUPUIS R.D., PFLÜGL C., CAPASSO F., SUN K., FISCHER A.M., PONCE F., Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition, Journal of Crystal Growth 316(1), 2011, pp. 75–80, DOI:10.1016/j.jcrysgro.2010.12.028.
• [5] BADURA M., BIELAK K., ŚCIANA B., RADZIEWICZ D., PUCICKI D., DAWIDOWSKI W., ŻELAZNA K., KUDRAWIEC R., TŁACZAŁA M., Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications, Optica Applicata 46(2), 2016, pp. 241–248, DOI:10.5277/oa160208.
• [6] WÓJCIK-JEDLIŃSKA A., WASIAK M., KOSIEL K., BUGAJSKI M., Photoluminescence characterization of AlGaAs/GaAs test superlattices used for optimization of quantum cascade laser technology, Optica Applicata 39(4), 2009, pp. 967–974.
• [7] WANG Y., SHENG X., GUO Q., LI X., WANG S., FU G., MAZUR Y.I., MAIDANIUK Y., WARE M.E., SALAMO G.J., LIANG B., HUFFAKER D.L., Photoluminescence study of the interface fluctuation effectfor InGaAs/InAlAs/InP single quantum well with different thickness, Nanoscale Research Letters 12(1), 2017, article 229, DOI:10.1186/s11671-017-1998-8.
• [8] KUDRAWIEC R., KOPACZEK J., POLAK M.P., SCHAROCH P., GLADYSIEWICZ M., MISIEWICZ J., RICHARDS R.D., BASTIMAN F., DAVID J.P.R., Experimental and theoretical studies of band gap alignment in GaAs1−xBix/ GaAs quantum wells, Journal of Applied Physics 116(23), 2014, article 233508, DOI:10.1063/1.4904740.
• [9] VURGAFTMAN I., MEYER J.R., RAM-MOHAN L.R., Band parameters for III–V compound semiconductors and their alloys, Journal of Applied Physics 89(11), 2001, pp. 5815–5875, DOI:10.1063/1.1368156.

Uwagi

Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2020).