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Effect of deposition temperature on structural, optical and electrical properties of copper bismuth sulphide (CuBiS2) thin films deposited by chemical bath deposition

Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The effect of deposition temperature on the structural, optical and electrical properties of copper bismuth sulphide (CuBiS2) thin films deposited by chemical bath deposition onto glass substrates at different deposition temperatures (40 °C, 50 °C, 60 °C and 70 °C) for 5 hours deposition time period was investigated. The obtained films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX) and optical absorption spectra. All deposited films were polycrystalline and had an orthorhombic structure. Their grain size had changed with deposition temperature and their compositions were nearly stoichiometric. The optical band gap value was decreased from 2.44 eV to 2.33 eV with increasing the film thickness. Electrical parameters such as mobility and type of electrical conduction were determined from the Hall effect measurements. They showed that the obtained films have n-type conductivity and mobility values of the copper bismuth sulphide (CuBiS2) films have changed with deposition temperature.
Wydawca
Rocznik
Strony
329--334
Opis fizyczny
Bibliogr. 24 poz., rys., tab.
Twórcy
  • Department of Physics, SNS College of Technology, Sathy main road, Vazhiaampalayam Privu, Coimbatore-35, Tamil Nadu, India
autor
  • Department of Physics, SNS College of Technology, Sathy main road, Vazhiaampalayam Privu, Coimbatore-35, Tamil Nadu, India
  • Department of Physics, SNS College of Technology, Sathy main road, Vazhiaampalayam Privu, Coimbatore-35, Tamil Nadu, India
Bibliografia
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  • [12] KHOT K.V., MALI S.S., GHANWAT V.B., KHARADES.D., MANE R.M., HONG C.K., BHOSALE P.N., New. J. Chem., 40 (2016), 3277.
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  • [14] MANE S.R., WALEKAR B.J., MANE R.M., KONDALKAR V.V., GHANWAT V.B., BHOSALE P.N., Procedia Mater. Sci., 6 (2014), 1104.
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  • [16] PAWAR S.H., PAWAR A.J., BHOSALE P.N., B. Mater. Sci., 8 (1986), 423.
  • [17] SCHRODER D. K., Semiconductor Material and Device Characterization, John Wiley & Sons, New York, 2006.
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  • [20] DESAI N.D, GHANWAT V.B, KHOT K.V., MALI S.S., HONG C.K., BHOSALE P.N., J. Mater. Sci-Mater. El., 27 (2016), 2385.
  • [21] GOSWAMI A., Thin Film Fundamentals, New Age International, New Delhi, 1996.
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Uwagi
Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-695d341e-14ce-4ca1-9957-cf496cb044e2
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