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A theoretical analysis of the mid-wavelength infrared range detectors based on the HgCdTe materials for high operating temperatures is presented. Numerical calculations were compared with the experimental data for HgCdTe heterostructures grown by the MOCVD on the GaAs substrates. Theoretical modelling was performed by the commercial platform SimuAPSYS (Crosslight). SimuAPSYS fully supports numerical simulations and helps understand the mechanisms occurring in the detector structures. Theoretical estimates were compared with the dark current density experimental data at the selected characteristic temperatures: 230 K and 300 K. The proper agreement between theoretical and experimental data was reached by changing Auger-1 and Auger-7 recombination rates and Shockley-Read-Hall carrier lifetime. The level of the match was confirmed by a theoretical evaluation of the current responsivity and zero-bias dynamic resistance area product (R0A) of the tested detectors.
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art. no. e141596
Opis fizyczny
Bibliogr. 31 poz., wykr., tab.
Twórcy
autor
- Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland
autor
- Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland
autor
- Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland
autor
- Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland
- VIGO System S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland
autor
- Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland
Bibliografia
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- [15] Kopytko, M., Kębłowski , A., Gawron, W. & Pusz, W. LWIR HgCdTe barrier photodiode with Auger-suppression. Semicond. Sci. Technol. 31, 035025 (2016). https://doi.org/10.1088/0268-1242/31/3/035025
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- [17] Gawron, W. et al. MOCVD Grown HgCdTe heterostructures for medium wave infrared detectors. Coatings 11, 611 (2021). https://doi.org/10.3390/coatings11050611
- [18] Kębłowski, A. et al. Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors. Proc. SPIE. 9819, 98191E-1 (2016). https://doi.org/10.1117/12.2229077
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- [22] Lopes, V. C., Syllaios, A. J. & Chen, M. C. Minority carrier lifetime in mercury cadmium telluride. Semicond. Sci. Technol. 8, 824–841 (1993). https://doi.org/10.1088/0268-1242/8/6s/005
- [23] Aleshkin, V.Y. et al. Auger recombination in narrow gap HgCdTe/CdHgTe quantum well heterostructures. J. Appl. Phys. 129, 133106 (2021). https://doi.org/10.1063/5.0046983
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- [25] Schuster, J. et al. Junction optimization in HgCdTe: Shockley-Read-Hall generation-recombination suppression. Appl. Phys. Lett. 107, 023502 (2015). https://doi.org/10.1063/1.4926603
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- [28] Kopytko, M., Jóźwikowski, K., Martyniuk, P. & Rogalski, A. Photon recycling effect in small poxel p-i-n HgCdTe long wavelenght infrared photodiodes. Infrared Phys. Technol. 97, 38–42 (2019). https://doi.org/10.1016/j.infrared.2018.12.015
- [29] Olson, B. V. et al. Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices. Appl. Phys. Lett. 107, 261104 (2015). https://doi.org/10.1063/1.4939147
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Uwagi
This work was supported by the National Science Centre (Poland), grant no. UMO-2019/33/B/ST7/00614; and by the National Centre for Research and Development grant no. RPMA.01.02.00-14-b451/18-00.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-674c400f-d6eb-4daf-82e7-c2fd32e1f363