Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn2S3 thin films

• Autorzy: Srivind J. , Nagarethinam V. S. , Balu A. R.

Identyfikatory

DOI

10.1515/msp-2016-0035

• Języki publikacji: EN

Abstrakty

EN

Nanoneedle structured Sn₂S₃ thin films were prepared by spray pyrolysis technique from aqueous solutions of tin (II) chloride and thiourea, keeping the molar concentrations of S:Sn = 0.01:0.01, 0.02:0.02, 0.03:0.03 and 0.04:0.04 in the starting solutions. XRD studies reveal that all the films exhibit orthorhombic crystal structure with a preferential orientation along the [2 1 1] direction. The peak intensity of the (2 1 1) plane is found to be maximum for the film coated with 0.02:0.02 S:Sn molar concentration which confirms the improved crystalline nature of this film. SEM images depict that the film coated with S:Sn molar concentration 0.02:0.02 exhibit needle shaped grains. The optical band gap exhibits red shift from 2.12 eV to 2.02 eV with an increase in S:Sn precursor molar concentration. Electrical studies show that the films having S:Sn molar concentrations 0.01:0.01 and 0.02:0.02 exhibit minimum resistivity values of 0.238 and 0.359Ω ·cm, respectively.

Słowa kluczowe

EN

XRD; scanning electron microscopy; optical band gap; thin films

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 2
• Strony: 393--398
• Opis fizyczny: Bibliogr. 28 poz., rys., tab.

Twórcy

autor

Srivind J.

• PG and Research Department of Physics, AVVM Sri Pushpam College, Poondi-613 503, Tamilnadu, India

autor

Nagarethinam V. S.

• PG and Research Department of Physics, AVVM Sri Pushpam College, Poondi-613 503, Tamilnadu, Indi

autor

Balu A. R.

• PG and Research Department of Physics, AVVM Sri Pushpam College, Poondi-613 503, Tamilnadu, India

Bibliografia

• [1] Jiang T., Ozin G.A., J. Mater. Chem., 8 (1998), 1099.
• [2] Radot M.B., Day P., Adv. Inorg. Chem. Radiochem., 10 (1967), 247.
• [3] Khadraoui M., Benramdane N., Mathieu C., Bouzidi A., Miloua R., Kebbab Z., Solid State Commun., 150 (2009), 297.
• [4] Lofersky J.J., Appl. Phys., 27 (1956), 77.
• [5] Khelia C., Boubakar K., Ben Nasrallah T., Amlouk M., Belgaum S., Saadallah F., Yocoubi N., J. Crys. Growth, 311 (2009), 1032.
• [6] Yue G.H., Wang W., Wang L.S., Wang X., Yan P.X., Chen Y., Peng D.L., J. Alloy. Compd., 474 (2010), 445.
• [7] Khomane A.S., J. Alloy. Compd., 506 (2010), 849.
• [8] Chate P.A., Hankare P.P., Sathe D.J., J. Alloy. Compd., 505 (2010), 140.
• [9] Sehlat R., Armstrong N.R., Parkinson B.A., Pettenkofer C., Jaegermann W., Surf. Sci., 385 (1997), 1.
• [10] Ghosh B., Das M., Banerjee P., Das S., Appl. Surf. Sci., 254 (2008), 6436.
• [11] Salah H., Bouzouita H., Rezig B., Thin Solid Films, 480 – 481 (2005), 439.
• [12] Lopez S., Granades S., Ortiz A., Semicond. Sci. Technol., 11 (1996), 433.
• [13] Manjula N., Usharani K., Abalu R., Nagarethinam V.S., Int. J. Chem. Tech. Res., 6 (2014), 705.
• [14] Usharani K., Balu A.R., Acta Metall. Sin., 28 (2015) 64.
• [15] Narasimman V., Nagarethinam V.S., Balu A.R., Suganya M., Anbarasi M., Usharani K., Int. J. Appl. Res. Eng. Sci., 1 (2014), 7.
• [16] Al-Douri Y., Khasawneh Q., Kiwan S., Hashim U., Abd Hamid S.B., Reshak A.H., Bouhemadou A., Ameri M., Khenata R., Energ. Convers. Mange., 82 (2014), 238.
• [17] Rajashree C., Balu A.R., Nagarethinam V.S., Surf. Eng., 31 (2015), 316.
• [18] Syed Basheer Ahamed M.G., Nagarethinam V.S., Balu A.R., Thayumanavan A., Murali K.R., Sanjeeviraja C., Jayachndran M., Cryst. Res. Technol., 45 (2010), 421.
• [19] Chu J., Jin Z., Wang W., Liu H., Wang D., Yang J., Hong Z., J. Alloy. Compd., 517 (2012), 54.
• [20] Syed Basheer Ahamed M.G., Balu A.R., Nagarethinam V.S., Thayumanavan A., Murali K.R., Sanjeeviraja C., Jayachndran M., Cryst. Res. Technol., 45 (2010), 387.
• [21] Anbarasi M., Sivaraman T., Nagarethinam V.S., Balu A.R., Int. J. Chem. Phys. Sci., 3 (2014), 1.
• [22] Chalana S.R., Vinodkumar R., Navas I., Ganesan V., Mahadevan Pillai V.P., J. Lumin., 132 (2012), 944.
• [23] Sivaraman T., Balu A.R., Nagarethinam V.S., Mat. Sci. Semicond. Proc., 27 (2014), 915.
• [24] Chaura S., Chaura N.B., Pandey R.K., Physica E, 28 (2005), 439.
• [25] Ye C.H., Fang X.S., Li G.H., Zhang L.D., Appl. Phys. Lett., 85 (2004), 3035.
• [26] Ehrlich W., Gumlich H.E., Tschierse D., J. Crys. Growth, 72 (1985), 37.
• [27] Vigil O., Riech I., Garcia-Rocha M., Zelayaangel O., J. Vac. Sci. Technol. A, 15 (1997), 2282.
• [28] Mochizuki K., Satoh M., Igaki K., Jpn. J. Appl. Phys., 22 (1983), 1414.

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.