Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load

• Autorzy: Bąba Sebastian

Identyfikatory

DOI

10.24425/bpasts.2021.137386

• Języki publikacji: EN

Abstrakty

EN

The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component. In this paper, a reliability model for SiC power MOSFET in SOT – 227 B housing, subjected to power cycling, is presented. Discussion covers preparation of Accelerated Lifetime Test required to develop such reliability model, analysis of semiconductor degradation progress, samples post-failure analysis and identification of reliability model parameters. Such model may be further used for failure prognostics or useful lifetime estimation of High Performance Power Supplies.

Słowa kluczowe

EN

reliability engineering; reliability modelling; power MOSFET; SiC; silicon carbide

PL

inżynieria niezawodności; modelowanie niezawodności; SiC; węglik krzemu; tranzystor mocy MOSFET

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2021
• Tom: Vol. 69, nr 3
• Strony: art. no. e137386
• Opis fizyczny: Bibliogr. 33 poz., rys., tab.

Twórcy

autor

Bąba Sebastian

• TRUMPF Huettinger Sp. z o.o., Research and Development Department, 05-220 Zielonka, Poland

• https://orcid.org/0000-0001-6602-3043

Bibliografia

• [1] S. Baba, W. Gajewski, M. Jasinski, M. Zelechowski, and M.P. Kazmierkowski, “High performance power supplies for plasma materials processing”, IEEE Access 9, 19327–19344 (2021).
• [2] K. Fischer, K. Pelka, A. Bartschat, B. Tegtmeier, D. Coronado, C. Broer, and J. Wenske, “Reliability of power converters wind turbines: Exploratory analysis of failure and operating data from a worldwide turbine fleet”, IEEE Trans. Power Electron. 34(7), 6332–6344 (2019).
• [3] S. O’Donnell, P. Wheeler, and A. Castellazzi, “Reliability analysis of sic mosfet power module for more electric aircraft motor drive applications”, 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles International Transportation Electrification Conference (ESARS-ITEC), 1–4 (2018).
• [4] I. Vernica, H. Wang, and F. Blaabjerg, “Design for reliability and robustness tool platform for power electronic systems – study case on motor drive applications”, 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 1799–1806 (2018).
• [5] Y. Shen, A. Chub, H. Wang, D. Vinnikov, E. Liivik, and F. Blaabjerg, “Wear-out failure analysis of an impedance-source pv microinverter based on system-level electrothermal modeling”, IEEE Trans. Ind. Electron. 66(5), 3914–3927 (2019).
• [6] M. Bajerlein, M. Bor, W. Karpiuk, R. Smolec, and M. Spadło, “Strength analysis of critical components of high-pressure fuel pump with hypocycloid drive”, Bull. Pol. Acad. Sci. Tech. Sci. 68(6), 1341–1350 (2020).
• [7] W. Wang and D.B. Kececioglu, “Fitting the Weibull log-linear model to accelerated life-test data”, IEEE Trans. Reliab. 49(2), 217–223 (2000).
• [8] T. Tomaszewski, P. Strzelecki, M. Wachowski, and M. Stopel, “Fatigue life prediction for acid-resistant steel plate under operating loads”, Bull. Pol. Acad. Sci. Tech. Sci. 68(4), 2300–1917 (2020).
• [9] J. Zhang, Z. Qiu, E. Zhang, and P. Ning, “Comparison and analysis of power cycling and thermal cycling lifetime of igbt module”, 2018 21st International Conference on Electrical Machines and Systems (ICEMS), 876–880 (2018).
• [10] M. Dbeiss and Y. Avenas, “Power semiconductor ageing test bench dedicated to photovoltaic applications”, IEEE Trans. Ind. Appl. 55(3), 3003–3010 (2019).
• [11] T. Ziemann, U. Grossner, and J. Neuenschwander, “Power cycling of commercial sic mosfets”, 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 24–31 (2018).
• [12] E. Ugur, F. Yang, S. Pu, S. Zhao, and B. Akin, “Degradation assessment and precursor identification for sic mosfets under high temp cycling”, IEEE Trans. Ind. Appl. 55(3), 2858–2867 (2019).
• [13] S. Baba, A. Gieraltowski, M.T. Jasinski, F. Blaabjerg, A.S. Bahman, and M. Zelechowski, “Active power cycling test bench for sic power mosfets – principles, design and implementation”, IEEE Trans. Power Electron. 36(3), 2661–2675 (2021).
• [14] J. Liu, G. Zhang, B. Wang, W. Li, and J. Wang, “Gate failure physics of sic mosfets under short-circuit stress”, IEEE Electron Device Lett. 41 (1), 103–106 (2020).
• [15] U. Karki and F.Z. Peng, “Effect of gate-oxide degradation on electrical parameters of power mosfets”, IEEE Trans. Power Electron. 33(12), 10764–10773 (2018).
• [16] Y. Huang, Y. Luo, F. Xiao, and B. Liu, “Failure mechanism of die-attach solder joints in igbt modules under pulse high-current power cycling”, IEEE J. Emerg. Sel. Top. Power Electron. 7(1), 99–107 (2019).
• [17] S.-H. Ryu, “Sic power mosfet ruggedness”, ECPE Workshop: Power Semiconductor Robustness – What Kills Power Devices?, ECPE, 1–1 (2020).
• [18] J. Sun, J.Wei, Z. Zheng, Y.Wang, and K. J. Chen, “Short circuit capability and short circuit induced vth instability of a 1.2-kv sic power mosfet”, IEEE J. Emerg. Sel. Top. Power Electron. 7(3), 1539–1546 (2019).
• [19] U. Choi and F. Blaabjerg, “Separation of wear-out failure modes of igbt modules in grid-connected inverter systems”, IEEE Trans. Power Electron. 33(7), 6217–6223 (2018).
• [20] C. Zorn and N. Kaminski, “Acceleration of temperature humidity bias (thb) testing on igbt modules by high bias levels”, 2015 IEEE 27th International Symposium on Power Semiconductor Devices IC’s (ISPSD), 385–388 (2015).
• [21] IEC 60749-34 Ed. 1.0 b:2005, Semiconductor devices – mechanical and climatic test methods – part 34: Power cycling, American National Standards Institute (ANSI) (August 19, 2007).
• [22] F. Wagner, G. Reber, M. Rittner, M. Guyenot, M. Nitzsche, and B. Wunderle, “Power cycling of sic-mosfet single-chip modules with additional measurement cycles for life end determination”, CIPS 2020; 11th International Conference on Integrated Power Electronics Systems, 1–6 (2020).
• [23] C. Schwabe, P. Seidel, and J. Lutz, “Power cycling capability of silicon low-voltage mosfets under different operation conditions”, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 495–498 (2019).
• [24] C. Durand, M. Klingler, D. Coutellier, and H. Naceur, “Power cycling reliability of power module: A survey”, IEEE Trans. Device Mater. Reliab. 16(1), 80–97 (2016).
• [25] U. Scheuermann and S. Schuler, “Power cycling results for different control strategies”, Microelectron. Reliab. 50(9), 1203‒1209 (2010), 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis.
• [26] M. Sathik, T.K. Jet, C.J. Gajanayake, R. Simanjorang, and A.K. Gupta, “Comparison of power cycling and thermal cycling effects on the thermal impedance degradation in igbt modules”, IECON 2015 – 41st Annual Conference of the IEEE Industrial Electronics Society, 001170–001175 (2015).
• [27] M. Thoben and M. Tuellmann, “Lifetime testing i (pc principles)”, ECPE Tutorial: Testing Automotive Power Modules According to the ECPE Guideline AQG 324 (2021).
• [28] European Center for Power Electronics, “Qualification of power modules for use in power electronics converter units in motor vehicles”, ECPE Guideline AQG 324 (2019).
• [29] V. Raveendran, M. Andresen, and M. Liserre, “Improving onboard converter reliability for more electric aircraft with lifetime-based control”, IEEE Trans. Ind. Electron. 66(7), 5787–5796 (2019).
• [30] B. Zhou, T. Lu, and J. You, “Study on fatigue ductility coefficient and life prediction for mixed solder joints under thermal cycle loads”, 2014 10th International Conference on Reliability, Maintainability and Safety (ICRMS), 686–690 (2014).
• [31] K. Okada, K. Kurimoto, and M. Suzuki, “Intrinsic mechanism of non-linearity in weibull tddb lifetime and its impact on lifetime prediction”, 2015 IEEE International Reliability Physics Symposium, 2A.4.1–2A.4.5 (2015).
• [32] J. Ling, T. Xu, R. Chen, O. Valentin and C. Luechinger, “Cu and Al-Cu composite-material interconnects for power devices”, 2012 IEEE 62nd Electronic Components and Technology Conference, 1905‒1911 (2012), doi: 10.1109/ECTC.2012.6249098.
• [33] R. Bayerer, T. Herrmann, T. Licht, J. Lutz, and M. Feller, “Model for power cycling lifetime of igbt modules – various factors influencing lifetime”, 5th International Conference on Integrated Power Electronics Systems, 1–6 (2008).

Uwagi

Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2021).