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Kierunki rozwoju sprzężonych fazowo matryc krawędziowych diod laserowych

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EN
Trends in development of phase locked arrays of edge emitting laser diodes
Języki publikacji
PL
Abstrakty
PL
Przedstawiony artykuł opisuje główne kierunki rozwoju sprzężonych fazowo matryc krawędziowych diod laserowych. Zaprezentowane zostały opisy teoretyczne typu struktur oraz najważniejsze i najciekawsze rozwiązania konstrukcyjne wprowadzane do technologii tego typu laserów na przestrzeni lat. Zwrócono również uwagę na możliwe przyszłe kierunki rozwoju oraz na przyrządy wykonane w Polsce.
EN
In this paper, there are shown the main trends in development of phase locked arrays of edge emitting laser diodes. There are shown theoretical descriptions of such structures and the most important and interesting technological solutions. Future possibilities of development and the devices manufactured in Poland are described.
Rocznik
Strony
53--61
Opis fizyczny
Bibliogr. 53 poz., rys., wykr.
Twórcy
autor
  • Instytut Technologii Materiałów Elektronicznych, Zakład Optoelektroniki, ul. Wólczyńska 133, 01-919 Warszawa
  • Politechnika Warszawska, Wydział Fizyki, ul. Koszykowa 75, 00-662 Warszawa
Bibliografia
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  • [32] Tang X., van der Ziel J. P., Chin A. K., Mode locking of individual array modes of a gain-guided single-quantum-well laser array with an external mirror, IEEE Journal of Quantum Electronics, vol. 33 (1997), no. 5, 784-790
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  • [34] Lichtner M., Tronciu V. Z., Vladimirov A. G., Theoretical investigation of striped and non-striped broad area lasers with off-axis feedback, IEEE Journal of Quantum Electronics, vol. 48 (2012), no. 3, 353-360
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  • [38] Welch D. F., Streifer W., Cross P. S., Scifres D. R., Y-Junction semiconductor laser arrays: part II–experiments, IEEE Journal of Quantum Electronics, vol. 23 (1987), no. 6, 752-756
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  • [40] Gordeev N. Yu., Maximov M. V., Shernyakov Y. M., Novikov I. I., Karachinsky L. Ya., Shchukin V. A., Kettler T., Posilovic K., Ledentsov N. N., Bimberg D., Duboc R., Sharon A., Aribov D. B., Ben-Ami U., High-power one-, two-, and three-dimensional photonic crystal edge-emitting laser diodes for ultrahigh brightness applications, Proceedings of SPIE, vol. 6889 (2008), Physics and Simulation of Optoelectronic Devices XVI, 68890W-1-68890W-15
  • [41] Maximov M. V., Shernyakov Y. M., Novikov I. I., Karachinsky L. Ya., Gordeev N. Yu., Ben-Ami U., Bortman-Abriv D., Sharon A., Shchukin V. A., Ledentsov N. N., Kettler T., Posilovic K., Bimberg D., High-power low-beam divergence edge-emitting semiconductor laser with 1- and 2-D photonic bandgap crystal waveguide, IEEE Journal of Selected Topics in Quantum Electronics, vol. 14 (2008), no. 4, 1113-1122
  • [42] Lucas-Leclin G., Paboeuf D., Georges P., Michel N., Calligaro M., Krakowski M., Lim J. J., Sujecki S., Larkins E., Externalcavity designs for phase-coupled laser diode arrays, High Power Diode Lasers and Systems Conference (HPD), Coventry, 2009
  • [43] Lim J. J., Sujecki S., Lang L., Zhang Z., Paboeuf D., Pauliat G., Lucas-Leclin G, Georges P., MacKenzie R. C. I., Bream P., Bull S., Hasler K., Sumpf B., Wenzel H., Erbert G., Thestrup B., Petersen P. M., Michel N., Krakowski M.,Larkins E. C., Design and simulation of next-generation high-power, high-brughtness laser diodes, IEEE Journal of Selected Topics in Quantum Electronics, vol. 15 (2009), no. 3, 993-1008
  • [44] Spreemann M., Eppich B., Schnieder F., Wenzel H., Erbert G., Modal behavior, spatial coherence, and beam quality of a highpower gain-guided laser array“, IEEE Journal of Quantum Electronics, vol. 46 (2010), no. 11, 1619-1625
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  • [46] Demidow D. M., Katsavets N. I., Ter-Martirosyan A. L., Chaly V. P., Powerful highly stable laser diodes for pumping of solidstate lasers, Quantum Electronics, vol. 28 (1998), no. 9, 768-770
  • [47] Demidow D. M., Ivkin A. N., Katsavets N. I., Kokin S. V., Leus R. V., Ter-Martirosayan A. L., Chaly V. P., 100-Watt laser bars based on phase-locked arrays, Technical Physics Letters, vol. 27 (2001), no. 1, 58-59
  • [48] Fendler D., Spiegelberg M., Moehrle M., Rehbein W., Lateral far-field of multiple-stripe high power 1480 nm broad-arealasers for pulsed operation, IEEE Photonics Society Summer Topical Meeting on High Power Semiconductor Lasers, 9 - 11 July 2012, Seattle, Washington
  • [49] Maląg A., Kozłowska A., Zynek J., Wróbel S., Strupiński W., Wesołowski M., Czoła D., Nizel J., Teodorczyk M., Gajewski M., Krzyżak K., Krzyżak L., Stańczyk M., Jagoda A., Przyborowska K., Łapińska B., Gawlik G., Zagojski A., „Optymalizacja konstrukcji i technologii szerokopaskowych diod laserowych i wieloemiterowych struktur laserowych projektowanych na zakres dużych mocy optycznych”, sprawozdanie z wykonania pracy naukowo-badawczej, Instytut Technologii Materiałów Elektronicznych, 2003
  • [50] Sobczak G., Dąbrowska E., Teodorczyk M., Kalbarczyk J., Maląg A., High power phase locked arrays of semiconductor lasers, IV Workshop of Physics and Technology of Semiconductor Lasers, Kazimierz Dolny, 23-26.10.2011
  • [51] Maląg A., Dąbrowska E., Teodorczyk M., Sobczak G., Kozłowska A. K., Kalbarczyk J., Asymmetric heterostructure with reduced distance from active region to heatsink for 810-nm range high-power laser diodes, IEEE Journal of Quantum Electronics, vol. 48 (2012), no. 4, 465-471
  • [52] Maląg A., Sobczak G., Teodorczyk M., Dąbrowska E., Krzyżak K., Projektowanie i realizacja diod laserowych dużej mocy ze strukturami do stabilizacji wiązki w płaszczyźnie złącza, XI Krajowa Konferencja Elektroniki, Darłówko Wschodnie, 11- 14.06.2012
  • [53] Sobczak G., Dąbrowska E., Teodorczyk M., Kalbarczyk J., Maląg A., Poprawa charakterystyk promieniowania diod laserowych dużej mocy poprzez zastosowanie struktur periodycznych w płaszczyźnie złącza", X Sympozjum Techniki Laserowej, Szczecin-Świnoujście, 24-28 września 2012
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-65ff0413-8e6f-41c6-a221-3eaddb03b2df
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