Preliminary comparison of three processes of AlN oxidation: dry, wet and mixed ones

• Autorzy: Korbutowicz R. , Zakrzewski A.

Identyfikatory

DOI

10.1515/msp-2016-0010

• Języki publikacji: EN

Abstrakty

EN

Three methods of AlN layers oxidation: dry, wet and mixed (wet with oxygen) were compared. Some physical parameters of oxidized thin films of aluminum nitride (AlN) layers grown on silicon Si(1 1 1) were investigated by means Energy-Dispersive X-ray Spectroscopy (EDS) and Spectroscopic Ellipsometry (SE). Three series of the thermal oxidations processes were carried out at 1012 degrees C in pure nitrogen as carrying gas and various gas ambients: (a) dry oxidation with oxygen, (b) wet oxidation with water steam and (c) mixed atmosphere with various process times. All the research methods have shown that along with the rising of the oxidation time, AlN layer across the aluminum oxide nitride transforms to aluminum oxide. The mixed oxidation was a faster method than the dry or wet ones.

Słowa kluczowe

EN

thermal oxidation; AlN; Al2O3; AlON; EDS; SE

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 1
• Strony: 157--163
• Opis fizyczny: Bibliogr. 10 poz., rys., tab.

Twórcy

autor

Korbutowicz R.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11-17, 50-370Wroclaw,Poland

autor

Zakrzewski A.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11-17, 50-370Wroclaw,Poland

Bibliografia

• 1. Pearton S.J., Zolper J.C., Shul R.J., Ren F., J. Appl. Phys., 86 (1999), 1. Preliminary comparison of three processes of AlN oxidation: dry, wet and mixed ones
• 2. Kim H., Park S.-J., Hwang H., J. Vac. Sci. Technol. B, 19 (2001), 579.
• 3. Nakano Y., Jimbo T., Appl. Phys. Lett., 82 (2003), 218.
• 4. Wu J.Y., Wang H.H., Wang Y.H., Houng M.P., IEEE Electron. Device. Lett., 20 (1999), 18.
• 5. Miczek M., Mizue C., Hashizume T., Adamowicz B., J. Appl. Phys., 103 (2008), 104510.
• 6. Bidzinski P., Miczek M., Adamowicz B., Mizue CH., Hashizume T., Jpn. J. Appl. Phys., 50 (2011), 04DF08.
• 7. Korbutowicz R., Prażmowska J., Wet thermal oxidation of GaAs and GaN. In: GRYM J. (Ed.), Semiconductor technologies, In-The, Vukovar, 2010, p. 105.
• 8. Korbutowicz R., Prażmowska J., Wągrowski Z., Szyszka A., Tłaczała M., Procedings of ASDAM 2008, Smolenice, Slovakia, 2008, 163.
• 9. Bruggeman D.A.G., Ann. Phys.-Leipzig, 24 (5) (1935), 636.
• 10. Zollner S., Konkar A., Gregory R.B., Wilson S.R., Nikishin S.A., Temkin H., MRS Spring Meeting San Francisco, 1999, Paper Y5.21.

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.