Polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion

• Autorzy: Qin C , Shen W , Zhao J. , Yu H. , Xu E

Identyfikatory

DOI

10.5277/oa150203

• Języki publikacji: EN

Abstrakty

EN

In this paper, polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion is experimentally and theoretically investigated. The carrier and photon density rate equations are numerically solved by using the time-domain traveling wave model. The material gain calculation, including the strain effect in the active layer, is based on the k·p method. By comparing experimental and computational results, it is demonstrated that the polarization of the injection signal has a significant influence on the gain recovery time of quantum well semiconductor optical amplifier. Under the cross-polarized signals injection, the output signals suffer the weakest and strongest patterning effects both for unstrained and tensile strained quantum well semiconductor optical amplifiers.

Słowa kluczowe

EN

semiconductor optical amplifiers; polarization; patterning effect

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2015
• Tom: Vol. 45, nr 2
• Strony: 163--172
• Opis fizyczny: Bibliorg. 14 poz., rys.

Twórcy

autor

Qin C

• School of Communication Engineering, Nanjing Institute of Technology, Nanjing, 211167, China

autor

Shen W

• School of Communication Engineering, Nanjing Institute of Technology, Nanjing, 211167, China

autor

Zhao J.

• School of Communication Engineering, Nanjing Institute of Technology, Nanjing, 211167, China

autor

Yu H.

• School of Communication Engineering, Nanjing Institute of Technology, Nanjing, 211167, China

autor

Xu E

• School of Optoelectronic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023,China

Bibliografia

• [1] JUN QIN, GUO-WEI LU, TAKAHIDE SAKAMOTO, KOUICHI AKAHANE, NAOKATSU YAMAMOTO, DANSHI WANG, CHENG WANG, HONGXIANG WANG, MIN ZHANG, TETSUYA KAWANISHI, YUEFENG JI, Simultaneous multichannel wavelength multicasting and XOR logic gate multicasting for three DPSK signals based on four-wave mixing in quantum-dot semiconductor optical amplifier, Optics Express 22(24), 2014, pp. 29413–29423.
• [2] JING XU, XINLIANG ZHANG, YIN ZHANG, JIANJI DONG, DEMING LIU, DEXIU HUANG, Reconfigurable all-optical logic gates for multi-input differential phase-shift keying signals: design and experiments, Journal of Lightwave Technology 27(23), 2009, pp. 5268–5275.
• [3] LIU Y., TANGDIONGGA E., LI Z., DE WAARDT H., KOONEN A.M.J., KHOE G.D., XUEWEN SHU, BENNION I., DORREN H.J.S., Error-free 320-Gb/s all-optical wavelength conversion using a single semiconductor optical amplifier, Journal of Lightwave Technology 25(1), 2007, pp. 103–108.
• [4] JING XU, YUNHONG DING, PEUCHERET C., WEIQI XUE, SEOANE J., ZSIGRI B., JEPPESEN P., MØRK J., Simple and efficient methods for the accurate evaluation of patterning effects in ultrafast photonic switches, Optics Express 19(1), 2011, pp. 155–161.
• [5] CONNELLY M.J., Theoretical calculations of the carrier induced refractive index change in tensile--strained InGaAsP for use in 1550 nm semiconductor optical amplifiers, Applied Physics Letters 93(18), 2008, article 181111.
• [6] ANTONIADES N., REICHMANN K.C., IANNONE P.P., FRIGO N.J., LEVINE A.M., ROUDAS I., The impact of polarization-dependent gain on the design of cascaded semiconductor optical amplifier CWDM systems, IEEE Photonics Technology Letters 18(20), 2006, pp. 2099–2101.
• [7] SHUANG ZHAO, CHONGQING WU, MU CHENG, ZHENGYONG LI, ZHEN FENG, Poincare sphere method for optimizing the wavelength converter based on nonlinear polarization rotation in semiconductor optical amplifiers, IEEE Journal of Quantum Electronics 45(8), 2009, pp. 1006–1013.
• [8] SONGNIAN FU, WEN-DE ZHONG, SHUM P., CHONGQING WU, ZHOU J.Q., Nonlinear polarization rotation in semiconductor optical amplifiers with linear polarization maintenance, IEEE Photonics Technology Letters 19(23), 2007, pp. 1931–1933.
• [9] DAILEY J., KOCH T., Simple rules for optimizing asymmetries in SOA-based Mach–Zehnder wavelength converters, Journal of Lightwave Technology 27(11), 2009, pp. 1480–1488.
• [10] BENNETT B.R., SOREF R.A., DEL ALAMO J.A., Carrier-induced change in refractive index of InP, GaAs and InGaAsP, IEEE Journal of Quantum Electronics 26(1), 1990, pp. 113–122.
• [11] JIAN WANG, SCHWEIZER H.C., A quantitative comparison of the classical rate-equation model with the carrier heating model on dynamics of the quantum-well laser: the role of carrier energy relaxation, electron–hole interaction, and Auger effect, IEEE Journal of Quantum Electronics 33(8), 1997, pp. 1350–1359.
• [12] CHIH-SHENG CHANG, SHUN LIEN CHUANG, Modeling of strained quantum-well lasers with spin-orbit coupling, IEEE Journal of Selected Topics in Quantum Electronics 1(2), 1995, pp. 218–229.
• [13] SHUNJI SEKI, YAMANAKA T., WAYNE LUI, YUZO YOSHIKUNI, YOKOYAMA K., Theoretical analysis of pure effects of strain and quantum confinement on differential gain in InGaAsP/lnP strained-layer quantum-well lasers, IEEE Journal of Quantum Electronics 30(2), 1994, pp. 500–510.
• [14] CHOW W.W., Semiconductor-Laser Physics, Springer-Verlag, New York, 1994.