Tytuł artykułu
Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Języki publikacji
Abstrakty
This work highlights some physical properties related to the influence of aluminum, tin and copper incorporation on nanostructured zinc oxide (ZnO:M; M:Al, Sn and Cu) thin films prepared by ultrasonic spray pyrolysis technique (USP) on glass substrate at 350±5 °C. For the as-grown layers, M- to Zn-ratio was fixed at 1.5 %. The effects of metal doping on structural, morphological, optical and electrical properties were investigated. X-ray diffraction pattern revealed that the as-prepared thin films crystallized in hexagonal structure with (0 0 2) preferred orientation. The surface topography of the films was performed by atomic force microscopy. AFM images revealed inhibition of grain growth due to the doping elements incorporation into ZnO matrix, which induced the formation of ZnO nanoparticles. Optical measurements showed a high transparency around 90 % in visible range. Some optical parameters, such as optical band gap, Urbach energy, refractive index, extinction coefficient and dielectric constant were studied in terms of doping element. Particularly, dispersion of refractive index was discussed in terms of both Cauchy and single oscillator model proposed by Wemple and DiDomenico. Cauchy parameters and single oscillator energy E0 as well as dispersion energy Ed were calculated. Finally, electrical properties were investigated by means of electrical conductivity and Hall effect measurements. The measurements confirmed n type conductivity of the prepared thin films and a good agreement between the resistivity values and the oxidation number of doping element. The main aim of this work was the selection of the best candidate for doping ZnO for optoelectronics applications. The comparative study of M doped ZnO (M:Al, Sn and Cu) was performed. High rectifying efficiency of the Al/n-ZnO/p-Si/Al device was achieved and non-ideal behavior was revealed with n > 4.
Wydawca
Czasopismo
Rocznik
Tom
Strony
570--583
Opis fizyczny
Bibliogr. 77 poz., rys., tab.
Twórcy
autor
- Physics Faculty, USTOMB University POBOX 1505 Mnaouer, 31130 Oran, Algeria
- Film Device Fabrication-Characterization and Application FDFCA Research Group USTOMB, 31130 Oran, Algeria
autor
- Physics Faculty, USTOMB University POBOX 1505 Mnaouer, 31130 Oran, Algeria
- Film Device Fabrication-Characterization and Application FDFCA Research Group USTOMB, 31130 Oran, Algeria
autor
- Unité de Physique des Dispositifs à Semiconducteurs Université de Tunis El Manar, 2092 Tunis, Tunisia
autor
- Laboratory of thin films and plasma Mentouri University, 25000 Constantine, Algeria
autor
- Department of Science, Faculty of Education, Dicle University, Diyarbakır, Turkey
Bibliografia
- [1] Klingshirn C., Phys. Status Solidi B, 71 (1975), 547.
- [2] Park S.-M., Ikegami T., Ebihara K., Shin P.-K., Appl. Surf. Sci., 253 (2006), 1522.
- [3] Lokhandea C.D., Gondkara P.M., Rajaram S., Mane B., Shindea V.R., Hanb S.-H., J. Alloy. Compd., 475 (2009), 304.
- [4] Chang J.F., Kuo H.H., Leu I.C., Hon M.H., Sensor. Actuat. B-Chem., 84 (2002), 258.
- [5] Zunxian Yang A., Yun Huang B., Guonan Chen A., Zaiping Guo C., Shuying Cheng B., Shizhen Huang E., Sensor. Actuat. B-Chem., 140 (2009), 549.
- [6] Gruber D., Kraus F., Müller J., Sensor. Actuat. B-Chem., 92 (2003), 81.
- [7] Penga X.Y., Sajjada M., Chua J., Yangb B.Q., Fenga P.X., Appl. Surf. Sci., 257 (2011), 4795.
- [8] Ling B., Sun X.W., Zhao J.L., Tan S.T., Dong Z.L., Yang Y., Yu H.Y., Qi K.C., Physica E, 41 (2009), 635.
- [9] Sun J., Feng Q., Bian J., Yu D., Lia M., Li H., Liang H., Zhao J., Qiu H., Du G., J. Lumin., 131 (2011), 825.
- [10] Hwang S.-H., Chung T.-H., Lee B.-T., Mater. Sci. Eng. B-Adv., 157 (2009), 32.
- [11] Wang F.-H., Chang H.-P., Tseng C.-C., Huang C.-C., Liu H.-W., Curr. Appl. Phys., 11 (2011), 12.
- [12] Tomar M.S., Garia F.J., Thin solid Films, 90 (1982), 419.
- [13] Krishnamoorthy S., Agis A., Iliadi S., Solid State Electron., 52 (2008), 1710.
- [14] Shih W.-C., Wang M.-J., Nan L.I., Diam. Relat. Mater., 17 (2008), 390.
- [15] Fu Y.Q., Luo J.K., Du X.Y., Flewitt A.J., Li Y., Markx G.H., Walton A.J., Milne W.I., Sensor. Actuat. B-Chem., 143 (2010), 606.
- [16] Benhaliliba M., Benouis C.E., Silver T.A., J. Technol. Mater., 1 (2011), 24.
- [17] Okur S., Yakuphanoglu F., Stathatos E., Micro-electron. Eng., 87 (2010), 635.
- [18] Dickherber A., Corso C.D., Hunt D., Sensor. Actuat. A-Phys., 144 (2008), 7.
- [19] Reynolds D.C., Look D.C., Jogai B., Solid State Commun., 99 (1996), 873.
- [20] Shan F.K., Liu G.X., Lee W.J., Shin B.C., J. Appl. Phys., 101 (2007), 2437122.
- [21] Ohshima T., Thareja R.K., Ikegami T., Ebihara K., Surf. Coat. Tech., 169 (2003), 517.
- [22] Lupan O., Pauporte T., Chow L., Viana B., Pelle F., Ono L.K., Appl. Surf. Sci., 256 (2010), 1895.
- [23] Zhong W.W., Liu F.M., Cai L.G., Zhou C.C., Ding P., Zhang H., J. Alloy. Compd., 499 (2010), 265.
- [24] Sang B., Nagoya Y., Kushiya K., Yamase O., Sol. Energ. Mat. Sol. C., 75 (2003), 179.
- [25] Fu Q., Hu L., Yu D., Sun J., Zhang H., Huo B., Zhao Z., Mater. Lett., 63 (2009), 316.
- [26] Shimomura T., Kim D., Nakayama M., J. Lumin., 112 (2005), 191.
- [27] Henley S.J., Ashfold M.N.R., Cherns D., Surf. Coat. Tech., 177 (2004), 271.
- [28] Dinescu M., Verardi P., Appl. Surf. Sci., 106 (1996), 149.
- [29] Cheng B.C., Xiao Y.H., Wu G.S., Zhang L.D., Appl. Phys. Lett., 84 (2004), 416.
- [30] Lucio-Lopez M.A., Luna-Arias M.A., Maldonado A., La de M., Olvera L., Acosta D.R., Sol. Energ. Mat. Sol. C., 90 (2006), 733.
- [31] Boukhachem A., Fridjine S., Amlouk A., Boubaker K., Bouhafs M., Amlouk M., J. Alloy. Compd., 501 (2010), 339.
- [32] Chakraborty A., Mondal T., Bera S.K., Senc S.K., Ghosh R., Paul G.K., Mater. Chem. Phys., 112 (2008), 162.
- [33] Heerden Van J.L., Swanepoel R., Thin Solid Films, 299 (1997), 72.
- [34] Boubaker K., Chaouachi A., Amlouk M., Bouzouita H., Eur. Phys. J.-Appl. Phys., 37 (2007), 105.
- [35] Belgacem S., Bennaceur R., Rev. Phys. Appl., 25 (1990), 1245.
- [36] Li X.Y., Li H.J., Wang Z.J., Xia H., Xiong Z.Y, Wang J.X., Yang B.C., Opt. Commun., 282 (2009), 247.
- [37] Pankove J.I., Optical Processes in Semiconductors, Prentice-Hall Inc., Englewoord Cliffs, NJ, 1971.
- [38] Ilican S., Caglar Y., Caglar M., J. Optoelectron. Adv. M., 10 (2008), 2578.
- [39] Pejova B., Mater. Chem. Phys., 119 (2010), 367.
- [40] Boukhachem A., Ouni B., Karyaoui M., Madani A., Chtourou R., Amlouk M., Mat. Sci. Semicon. Proc., 15 (2012), 282.
- [41] Benhaliliba M., Benouis C.E., Aida M.S., Yakuphanoglu F., Sanchez Juarez A., J. Sol-gel Sci. Techn., 55 (2010), 335.
- [42] Jayabharathi J., Prabhakaran A., Thanikachalam V., Undharesan M., J. Photoch. Photobio. A, 325 (2016), 88.
- [43] Sreedhar A., Kwon J.H., Yi J., Su K.J., Gwag J.S., Mat. Sci. Semicon. Proc., 49 (2016), 8.
- [44] Ismail A.S., Mamat M.H., Sin N.D., Malek M.F., Zoolfakar A.S., Suriani A.B., Mohamed A., Ahmad M.K., Rusop M., Ceram. Int., 42 (2016), 9785.
- [45] Mrabet C., Kamoun O., Boukhachem A., Amlouk M., Manoubi T., J. Alloy. Compd., 648 (2015), 826.
- [46] Prajapati C.S., Kushwaha A., Sahay P.P., Mater. Chem. Phys., 142 (2013), 276.
- [47] Paraguay D.F., Morales J., Estrada L.W., Andrade E., Miki-Yoshida M., Thin Solid Films, 350 (1999), 192.
- [48] Corey R.B., Wyckoff R.W.G., ZEKGAX, 86 (1933), 8.
- [49] Shannon R.D., Acta Crystallogr. Section A, 32 (1976), 751.
- [50] Boughalmi R., Boukhachem A., Gaied I., Boubaker K., Bouhafs M., Amlouk M., Mat. Sci. Semicon. Proc., 16 (2013), 1584.
- [51] Prajapati C.S., Kushwaha A., Sahay P.P., Mater. Chem. Phys., 142 (2013), 123.
- [52] Sahal M., Hartiti B., Ridah A., Mollar M., Mari B., Microelectron. J., 39 (2008), 1425.
- [53] El-Nahass M.M., Farag M.A.A., Ibrahim E.M., Abd-El-Rahman S., Vacuum, 72 (2004), 453.
- [54] Fujihara S., Sasaki C., Kimura T., J. Eur. Ceram. Soc., 21 (2001), 2109.
- [55] Kelsall R.W., Hamley I.W., Geoghegan M., Nanoscale Science and Technology, John Wiley & Sons, West Sussex, 2005, p. 261.
- [56] Benhaliliba M., Benouis C.E., Mouffak Z., Ocak Y.S., Tiburcio-Silver A., Aida M.S., Garcia A.A., Tavira A., Sanchez Juarez A., Super-lattices and Microstructures 63 (2013), 228.
- [57] Loukil A., Boukhachem A., Amor B.M., Ghamnia M., Raouadi K., Ceram. Int., 42 (2016), 8274.
- [58] Mott N.F., Davis E.A., Electronic Processes in Non-Crystalline Materials, Clarendon Press, Oxford, 1979.
- [59] Kleider J.P., Gauthier M., Longeaud C., Roy D., Saadane O., Brüggemann R., Thin Solid Films, 188 (2002), 403.
- [60] Urbach F., Phys. Rev. A, 92 (1953), 1324.
- [61] Martienssen W., J. Phys. Chem. Solids, 21 (1957), 257.
- [62] Benouis C.E., Benhaliliba M., Sanchez Juarez A., Aida M.S., Chami F., Yakuphanoglu F., Journal of Alloys and Compounds, 490 (2010), 62.
- [63] Amlouk A., Boubaker K., Amlouk M., Bouhafs M., J. Alloy. Compd., 485 (2009), 887.
- [64] Benhaliliba M., Benouis C.E., Boubaker K., Amlouk M., Amlouk A., A New Guide to Thermally Optimized Doped Oxides Monolayer Spray-Grown Solar Cells: The Amlouk-Boubaker Optothermal Expansivity ψAB, Solar Cells - New Aspects and Solutions, InTech Edition, 2011.
- [65] Ahn J.S., Pode R., Lee K.B., Thin Solid Films, 623 (2017), 121.
- [66] Arifa H., Boukhachem A., Askri B., Boubaker K., Yumak A., Raouadi K., Ceram. Int., 42 (2016), 2147.
- [67] Mrabet C., Amor B.M., Boukhachem A., Amlouk M., Manoubi T., Ceram. Int., 42 (2016), 5963.
- [68] Boughalmi R., Boukhachem A., Kahlaoui M., Maghraoui H., Amlouk M., Mat. Sci. Semicon. Proc., 26 (2014), 593.
- [69] Boukhachem A., Ziouche A., Amor B.M., Kamoun O., Zergoug M., Maghraouimeherzi H., Yumak A., Boubaker K., Amlouk M., Mater. Res. Bull., 74 (2016), 202.
- [70] Mokhtari H., Benhaliliba M., Aida M.S., Attaf N., Ocak Y.S., EPJ Web of Conferences, 44 (2013), 03006.
- [71] Benouis C.E., Benhaliliba M., Mouffak Z., Avila-Garcia A., Tiburcio-Silver A., Ortega Lopez M., Romano Trujillo R., Ocak Y.S., Journal of Alloys and Compounds, 603 (2014), 213.
- [72] Missoum I., Benhaliliba M., Chaker A., Ocak Y.S., Benouis C.E., Synthetic Metals, 207 (2015), 42.
- [73] Missoum I., Ocak Y.S., Benhaliliba M., Benouis C.E., Chaker A., Synthetic Metals, 214 (2016), 76.
- [74] Cheung S.K., Cheung N.W., Appl. Phys. Lett., 49 (1986), 85.
- [75] Benhaliliba M., Journal of Nano- and Electronic Physics, 7, (2015), 02029.
- [76] Benhaliliba M., Benouis C.E., Aida M.S., Ayeshamariam A., Journal of Semiconductors, 38 (2017), 064004-1.
- [77] Mokhtari H., Benhaliliba M., Journal of Semiconductors, 38 (2017), 116001-1.
Uwagi
PL
Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-6494cb4c-a5b9-4e75-b881-dd9111d36e4f