Nanostructured device based on coated ZnO layer as a window in solar cell applications

• Autorzy: Mokhtari H. , Benhaliliba M. , Boukhachem A. , Aida M. S. , Ocak Y. S.

Identyfikatory

DOI

10.2478/msp-2018-0090

• Języki publikacji: EN

Abstrakty

EN

This work highlights some physical properties related to the influence of aluminum, tin and copper incorporation on nanostructured zinc oxide (ZnO:M; M:Al, Sn and Cu) thin films prepared by ultrasonic spray pyrolysis technique (USP) on glass substrate at 350±5 °C. For the as-grown layers, M- to Zn-ratio was fixed at 1.5 %. The effects of metal doping on structural, morphological, optical and electrical properties were investigated. X-ray diffraction pattern revealed that the as-prepared thin films crystallized in hexagonal structure with (0 0 2) preferred orientation. The surface topography of the films was performed by atomic force microscopy. AFM images revealed inhibition of grain growth due to the doping elements incorporation into ZnO matrix, which induced the formation of ZnO nanoparticles. Optical measurements showed a high transparency around 90 % in visible range. Some optical parameters, such as optical band gap, Urbach energy, refractive index, extinction coefficient and dielectric constant were studied in terms of doping element. Particularly, dispersion of refractive index was discussed in terms of both Cauchy and single oscillator model proposed by Wemple and DiDomenico. Cauchy parameters and single oscillator energy E0 as well as dispersion energy Ed were calculated. Finally, electrical properties were investigated by means of electrical conductivity and Hall effect measurements. The measurements confirmed n type conductivity of the prepared thin films and a good agreement between the resistivity values and the oxidation number of doping element. The main aim of this work was the selection of the best candidate for doping ZnO for optoelectronics applications. The comparative study of M doped ZnO (M:Al, Sn and Cu) was performed. High rectifying efficiency of the Al/n-ZnO/p-Si/Al device was achieved and non-ideal behavior was revealed with n > 4.

Słowa kluczowe

EN

nanostructured ZnO; spray pyrolysis; structural properties; optical properties; electrical measurements; ideality factor

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2018
• Tom: Vol. 36, No. 4
• Strony: 570--583
• Opis fizyczny: Bibliogr. 77 poz., rys., tab.

Twórcy

autor

Mokhtari H.

• Physics Faculty, USTOMB University POBOX 1505 Mnaouer, 31130 Oran, Algeria
• Film Device Fabrication-Characterization and Application FDFCA Research Group USTOMB, 31130 Oran, Algeria

autor

Benhaliliba M.

• Physics Faculty, USTOMB University POBOX 1505 Mnaouer, 31130 Oran, Algeria
• Film Device Fabrication-Characterization and Application FDFCA Research Group USTOMB, 31130 Oran, Algeria

autor

Boukhachem A.

• Unité de Physique des Dispositifs à Semiconducteurs Université de Tunis El Manar, 2092 Tunis, Tunisia

autor

Aida M. S.

• Laboratory of thin films and plasma Mentouri University, 25000 Constantine, Algeria

autor

Ocak Y. S.

• Department of Science, Faculty of Education, Dicle University, Diyarbakır, Turkey

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Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).