Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits

• Autorzy: Smaani Billel , Meraihi Yacin , Nafa Fares , Benlatreche Mohamed Salah , Akroum Hamza , Latreche Saida

Identyfikatory

DOI

10.24425/ijet.2021.137853

• Języki publikacji: EN

Abstrakty

EN

This paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog-AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed model is inserted in SMASH circuit simulator for the transient simulation and the configuration of the Colpitts oscillator, the common-source amplifier, and the inverter. The proposed model has the advantages of being simple and compact. It was validated using TCAD simulation results of the same transistor realized with Silvaco Software.

Słowa kluczowe

EN

double-gate MOSFET; compact model; ultra low power analog circuits

• Wydawca: Polish Academy of Sciences, Committee of Electronics and Telecommunication
• Czasopismo: International Journal of Electronics and Telecommunications
• Rocznik: 2021
• Tom: Vol. 67, No. 4
• Strony: 609--614
• Opis fizyczny: Bibliogr. 26 poz., schem., tab., wykr.

Twórcy

autor

Smaani Billel

• Ingénierie des Systémes Electriques Department, Faculty of Technology, Boumerdes University, Algeria

autor

Meraihi Yacin

• Laboratoire d'Ingénierie et Systèmes de Télécommunications, Faculté de Technologie, Boumerdes

autor

Nafa Fares

• Laboratoire d'Ingénierie et Systèmes de Télécommunications, Faculté de Technologie, Boumerdes

autor

Benlatreche Mohamed Salah

• Centre Universitaire Abdel Hafid Boussouf Mila, Algeria

autor

Akroum Hamza

• Laboratoire d’Automatique Appliquée, Université M’Hamed Bougara de Boumerdes, Algeria

autor

Latreche Saida

• Laboratoire Hyperfréquences et Semiconducteurs, Electronique Department, Constantine 1 University, Algeria

Bibliografia

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