Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

• Autorzy: Nowakowski-Szkudlarek Krzesimir , Muziol Grzegorz , Żak Mikolaj , Hajdel Mateusz , Siekacz Marcin , Feduniewicz-Żmuda Anna , Skierbiszewski Czesław

Identyfikatory

DOI

10.37190/oa200215

• Języki publikacji: EN

Abstrakty

EN

We investigated the influence of the In_0.17Ga_0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In_0.17Ga_0.83N:Mg contact layer with Mg doping levelas high as 2 × 10²⁰ cm^–3.

Słowa kluczowe

EN

gallium nitride; molecular beam epitaxy; contacts

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2020
• Tom: Vol. 50, nr 2
• Strony: 323--330
• Opis fizyczny: Bibliogr. 12 poz., rys., tab.

Twórcy

autor

Nowakowski-Szkudlarek Krzesimir

• Institute of High Pressure Physics PAS, Sokołowska 29/37, 01-142 Warsaw, Poland

autor

Muziol Grzegorz

• Institute of High Pressure Physics PAS, Sokołowska 29/37, 01-142 Warsaw, Poland

autor

Żak Mikolaj

• Institute of High Pressure Physics PAS, Sokołowska 29/37, 01-142 Warsaw, Poland

autor

Hajdel Mateusz

• Institute of High Pressure Physics PAS, Sokołowska 29/37, 01-142 Warsaw, Poland

autor

Siekacz Marcin

• Institute of High Pressure Physics PAS, Sokołowska 29/37, 01-142 Warsaw, Poland

autor

Feduniewicz-Żmuda Anna

• Institute of High Pressure Physics PAS, Sokołowska 29/37, 01-142 Warsaw, Poland

autor

Skierbiszewski Czesław

• Institute of High Pressure Physics PAS, Sokołowska 29/37, 01-142 Warsaw, Poland

Bibliografia

• [1] KUMAKURA K., MAKIMOTO T., KOBAYASHI N., Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer, Applied Physics Letters 79(16), 2001, pp. 2588–2590, DOI:10.1063/1.1410336.
• [2] GRECO G., IUCOLANO F., ROCCAFORTE F., Ohmic contacts to gallium nitride materials, Applied Surface Science 383, 2016, pp. 324–345, DOI:10.1016/j.apsusc.2016.04.016.
• [3] TANG H., SADAF S. M., WU X., JIANG W., Highly efficient p-type doping of GaN under nitrogen-rich and low-temperature conditions by plasma-assisted molecular beam epitaxy, AIP Advances 9(5), 2019, article 055008, DOI:10.1063/1.5089658.
• [4] YOO M.C., LEE J.W., MYOUNG J.M., SHIM K.H., KIM K., Low resistance ohmic contact on p-type GaN grown by plasma-assisted molecular beam epitaxy, MRS Proceedings 423, 1996, pp. 131–136, DOI:10.1557/proc-423-131.
• [5] PEARTON S.J., ABERNATHY C.R., REN F., Gallium Nitride Processing for Electronics, Sensors and Spintronics, Springer, London, 2006, DOI:10.1007/1-84628-359-0.
• [6] SKIERBISZEWSKI C., TURSKI H., MUZIOL G., SIEKACZ M., SAWICKA M., CYWIŃSKI G., WASILEWSKI Z.R., POROWSKI S., Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy, Journal of Physics D: Applied Physics 47(7), 2014, article 073001, DOI:10.1088/0022-3727/47/7/073001.
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• [8] IIDA D., TAMURA K., IWAYA M., KAMIYAMA S., AMANO H., AKASAKI I., Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy, Journal of Crystal Growth 312(21), 2010, pp. 3131–3135, DOI:10.1016/j.jcrysgro.2010.07.038.
• [9] CASTIGLIA A., CARLIN J.-F., GRANDJEAN N., Role of stable and metastable Mg–H complexes in p-type GaN for cw blue laser diodes, Applied Physics Letters 98(21), 2011, article 213505, DOI:10.1063/1.3593964.
• [10] FEDUNIEWICZ A., SKIERBISZEWSKI C., SIEKACZ M., WASILEWSKI Z.R., SPROULE I., GRZANKA S., JAKIEŁA R., BORYSIUK J., KAMLER G., LITWIN-STASZEWSKA E., CZERNECKI R., BOĆKOWSKI M., POROWSKI S., Control of Mg doping of GaN in RF-plasma molecular beam epitaxy, Journal of Crystal Growth 278(1–4), 2005, pp. 443–448, DOI:10.1016/j.jcrysgro.2005.01.004.
• [11] TURSKI H., SIEKACZ M., WASILEWSKI Z.R., SAWICKA M., POROWSKI S., SKIERBISZEWSKI C., Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers, Journal of Crystal Growth 367, 2013, pp. 115–121, DOI:10.1016/j.jcrysgro.2012.12.026.
• [12] SKIERBISZEWSKI C., SIEKACZ M., PERLIN P., FEDUNIEWICZ-ZMUDA A., CYWIŃSKI G., GRZEGORY I., LESZCZYŃSKI M., WASILEWSKI Z.R., POROWSKI S., Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE, Journal of Crystal Growth 305(2), 2007, pp. 346–354, DOI:10.1016/j.jcrysgro.2007.04.002.