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Suppression of Auger generation as the way to perfect detection of IR radiation

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Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Konferencja
Problemy rozwoju, produkcji i eksploatacji techniki uzbrojenia / XI Konferencja Naukowo-Techniczna (XI ; maj 2002 ; Rynia, Polska)
Języki publikacji
EN
Abstrakty
EN
Performance of infrared photodetectors operating at high temperatures is limited by the noise due to statistical nature of thermal generation of charge carriers in semiconductors. Auger processes are responsible for thermal generation in narrow gap semiconductors. Various ways to reduce Auger processes are considered including optimised doping, non-equilibrium mode of operations and the use of band gap engineered materials. The suppression of Auger processes will lead to perfect detection of long wavelength detection without cooling. Some applications of Auger suppressed devices are discussed including heterodyne receivers, IR imagers and detectors for optical communications.
Rocznik
Strony
57--68
Opis fizyczny
Bibliogr. 18 poz., rys., tab., wykr.
Twórcy
  • Military Institute of Armament Technology
Bibliografia
  • 1. J. Piotrowski, W. Galus and M. Grudzień, "Near room-temperature IR photodetectors," Infrared Phys. 31, 1-48 (1990).
  • 2. C.T. Elliott and N.T. Gordon, "Infrared Detectors", in Handbook on Semiconductors, Vol. 4, pp. 841-936, edited by C. Hilsum, North-Holland, Amsterdam (1993).
  • 3. J. Piotrowski. "Hg1-xCdxTe Infrared Photodetectors," in Infrared Photodetectors, 391-494, SPIE, Bellingham (1995).
  • 4. T. Elliott, N.T. Gordon, and A.M. White "Towards background-limited, room-temperature, infrared photon detectors in the 3-13 μm wavelength range", Appl. Phys. Lett., 74, 2881-2883 1999.
  • 5. M.A. Kinch, "Fundamental Physics of Infrared Detector Materials", J. Electron. Mater. 29 809-817 (2000).
  • 6. J. Piotrowski and W. Gawron. "Ultimate Performance of Infrared Photodetectors and Figure of Merit of Detector Material", Infrared Physics and Technology 38, 63-68 (1997).
  • 7. Krishnamurthy and T.N. Casselman "Detailed Caclulation of the Auger Life-time in p-Type HgCdTe", J. Electron. Mater. 29, 828-831 (2000).
  • 8. J. Piotrowski, M. Grudzień, Z. Nowak, Z. Orman, J. Pawluczyk, M. Romanis, W. Gawron, "Uncooled photovoltaic Hg1-xCdxTe LWIR detectors Proc. SPIE, 4130, 175-184 (2000).
  • 9. T. Elliott, "Non-equilibrium modes of operation of narrow-gap semiconductor devices", Semiconductor Sci. Technol. 5, S30-S37(1990).
  • 10. C.T. Elliott; N. J. Gordon; R.S. Hall; T. J. Phillips; C.L. Jones; B.E. Matthews, C.D. Maxey, N.E. Metcalfe, "Metal organic vapor phase epitaxy (MOVPE) grown heterojunction diodes in Hg1-xCdxTe", Proceedings of SPIE, 2269, 648-657 (1994).
  • 11. Elliott C.T., Gordon N.T., Hall R.S., Phillips T.J., White A.M., Jones C.L., Maxey C.D. and Metcalfe N.E., "Recent results on MOVPE grown heterostructure devices", J. Electron. Mat. 25(8), 1139-1145 (1996).
  • 12. D. Maxey, C.L. Jones, N.E. Metcalfe, R. Catchpole, M.R. Houlton, A.M. White, N.T. Gordon and C.T. Elliott. "Growth of Fully Doped Hg1-xCdxTe Heterostructures Using a Novel Iodine Doping Source to Achieve Improved Device Performance at Elevated Temperatures", J. Electron Mat. Aug. 25 1276-1285 (1996).
  • 13. Elliott C.T., Gordon N.T., Phillips T.J., Steen H, White A.M., Wilson D.J., Jones C.L., Maxey C.D. and Metcalfe NE, "Minimally cooled heterojunction laser heterodyne detectors in MOVPE grown Hg1-xCdxTe", J. Electron. Mat. 25(8), 1146-1150 (1996).
  • 14. C.L. Jones, N.E. Metcalfe, A. Best, R. Catchpole, C.D. Maxey, N.T Gordon, R.S. Hall, T. Colin, and T. Skauli, "Effect of Device Processing on 1/f Noise in Uncooled, Auger-Suppressed CdHgTe Diodes", J. Electron. Mat. 27 733-739 (1998).
  • 15. N. Murdin, M. Kamal-Saadi, A. Lindsay, E.P. O'Reilly, and A.R. Adams G.J. Nott, J.G. Crowder, and C.R. Pidgeon I.V. Bradley and J.-P.R. Wells T. Burke, A.D. Johnson, and T. Ashley "Auger recombination in long-wavelength infrared lnNxSb1-x", Appl. Phys. Lett. 78, 1568-1570 (2001).
  • 16. A. Rogalski, K. Adamiec, and J. Rutkowski, "Narrow gap semiconductors photodiodes", SPIE Press, Bellingham (2000).
  • 17. M. Razeghi, "lnAs/GaSb Type-II Superlattices: New Possibilities for Infrared Photon Sensing", MIOMD V (2001- to be published).
  • 18. M.A. Kinch, "High Operation Temperature (HOT) detector requirements", Proc. SPIE, 4454, 168-179 (2001).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-612071ad-5180-4766-b676-9dd32b35eb68
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