Influence of duration time of CVD process on emissive properties of carbon nanotubes films

• Autorzy: Stępińska I. , Kozłowski M. , Radomska J. , Wronka H. , Czerwosz E. , Sobczak K.

Identyfikatory

DOI

10.1515/msp-2015-0023

• Języki publikacji: EN

Abstrakty

EN

In this paper various types of films made of carbon nanotubes (CNTs) are presented. These films were prepared on different substrates (Al₂O₃, Si n-type) by the two-step method. The two-step method consists of physical vapor deposition step, followed by chemical vapor deposition step (PVD/CVD). Parameters of PVD process were the same for all initial films, while the duration times of the second step – the CVD process, were different (15, 30 min.). Prepared films were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and field emission (FE) measurements. The I-E and F-N characteristics of electron emission were discussed in terms of various forms of CNT films. The value of threshold electric field ranged from few V/μm (for CNT dispersed rarely on the surface of the film deposited on Si) up to ~20 V/μm (for Al₂O₃ substrate).

Słowa kluczowe

EN

carbon nanotube film; field emission; SEM; TEM

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2015
• Tom: Vol. 33, No. 1
• Strony: 36--46
• Opis fizyczny: Bibliogr. 23 poz., rys., tab.

Twórcy

autor

Stępińska I.

• Tele and Radio Research Institute, Ratuszowa 11, 03-450 Warsaw, Poland

autor

Kozłowski M.

• Tele and Radio Research Institute, Ratuszowa 11, 03-450 Warsaw, Poland
• Institute of Physics PASc., al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Radomska J.

• Tele and Radio Research Institute, Ratuszowa 11, 03-450 Warsaw, Poland

autor

Wronka H.

• Tele and Radio Research Institute, Ratuszowa 11, 03-450 Warsaw, Poland

autor

Czerwosz E.

• Tele and Radio Research Institute, Ratuszowa 11, 03-450 Warsaw, Poland

autor

Sobczak K.

• Institute of Physics PASc., al. Lotników 32/46, 02-668 Warsaw, Poland

Bibliografia

• [1] CHEN J., ZHOU X., DENG S.Z., XU N.S., Ultramicroscopy, 95 (2003), 153.
• [2] YUE G.Z., QIU Q., GAO B., CHENG Y., ZHANG J., SHIMODA H., CHANG S., LU J.P., ZHOU O., Appl. Phys. Lett., 81 (2) (2002), 355.
• [3] SARRAZIN P., BLAKE D., DELZEIT L., MEYYAPPAN M., BOYER B., SNYDER S., ESPINOSA B., Adv. X-Ray Anal., 47 (2004), 232.
• [4] READ M.E., SCHWARZ W.G., KREMER M.J., LENNHOFF J.D., CARNAHAN D.L., KEMPA K., REN Z.F., PAC 2001 Proc., (2001), 1026.
• [5] SILAN J.L., NIEMANN D.L., RIBAYA B.P., RAHMAN M., MEYYAPPAN M., NGUYEN C.V., Solid-State Electron., 54 (2010), 1543.
• [6] OK-JOO L., KUN-HONG L., Appl. Phys. Lett., 82 (2003), 3770.
• [7] JONGE N., BONARD J.M., Philos. T. R. Soc. A, 362, (2004), 2239.
• [8] FILIP V., NICOLAESCU D., TANEMURA M., OKUYAMA F., Ultramicroscopy, 89 (2001), 39.
• [9] JONGE N., DRUTEN N.J., Ultramicroscopy, 95 (2003), 85.
• [10] NAKAHARA H., KUSANO Y., KONO T., SAITO Y., Appl. Surf. Sci., 256 (2009), 1214.
• [11] GRONING P., RUFFIEUX P., SCHLAPBACH L., GRONING O., Adv. Eng. Mater., 5 (2003), 541.
• [12] BONARD J.-M., CROCI M., ARFAOUI I., NOURY O., SARANGI D., CHATELAIN A., Diam. Relat. Mater., 11 (2002), 763.
• [13] NILSSON L., GROENING O., EMMENEGGER C., KUETTEL O., SCHALLER E., SCHLAPBACH L., KIND H., BONARD J-M., KERN K., Appl. Phys. Lett., 76 (15) (2000), 2071.
• [14] WANGA X.Q., WANGA M., LIB Z.H., XUA Y.B., HE P.M., Ultramicroscopy, 102 (2005), 181.
• [15] POGORELOV E.G., CHANG Y.C., ZHBANOV A.I., YONG-GU L., J. Appl. Phys., 108 (2010), 044502.
• [16] SAITO Y., UEMURA S., Carbon, 38 (2000), 169.
• [17] BONARD J.M., STOCKLI T., NOURY O., CHATELAIN A., Appl. Phys. Lett., 78 (2001), 2775.
• [18] KOZŁOWSKI M., DŁU˙Z EWSKI P., KOWALSKA E., CZERWOSZ E., Cent. Eur. J. Phys., 9 (2) (2011), 344.
• [19] KOWALSKA E., KOWALCZYK P., RADOMSKA J., CZERWOSZ E., WRONKA H., BYSTRZEJEWSKI M., J. Therm. Anal. Calorim., 86 (2006), 115.
• [20] CZERWOSZ E., DŁU˙ZEWSKI P., NOWAKOWSKI R., WRONKA H., Vacuum, 48 (1997), 357.
• [21] KOWALSKA E., CZERWOSZ E., DŁU˙ZEWSKI P.A., KOZŁOWSKI M., RADOMSKA J., Diam. Relat. Mater., 13 (2004), 1008.
• [22] SINNOTT S.B., ANDREWS R., QIAN D., RAO A.M., MAO Z., DICKEY E.C., DERBYSHIRE F., Chem. Phys. Lett., 315 (1999), 25.
• [23] DE JONGE N., BONARD J.-M., Philos. T. R. Soc. A, 362 (2004), 2239.